Growth of GaN/AIN Quantum Dots on SiC(0001) by Plasma-Assisted MBE

机译：等离子体辅助MBE在SiC（0001）上生长GaN / AIN量子点

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The GaN/AIN system grown on SiC (0001) by plasma assisted molecular-beam epitaxy presents N-polarity. Based on reflection high-energy electron diffraction (RHEED) experiments, we demonstrate that 1 ML of Ga behaves as a surfactant during the growth of GaN on AIN (0001) surface, which makes possible to synthesize GaN quantum dots using the Modified Stranski-Krastanow growth mode. The N-polarity GaN islands formed on A1N (0001) are hexagonal pyramids with {1103} facets. The island density can be controlled in the 3 - 9 x 10~(10) cm~(-2) range.

机译：通过等离子体辅助分子束外延在SiC（0001）上生长的GaN / AIN系统呈现N极性。基于反射高能电子衍射（RHEED）实验，我们证明1 ML的Ga在AIN（0001）表面上的GaN生长过程中起表面活性剂的作用，这使得使用改良的Stranski-Krastanow合成GaN量子点成为可能增长模式。在AlN（0001）上形成的N极性GaN岛是具有{1103}晶面的六边形金字塔。岛密度可以控制在3-9 x 10〜（10）cm〜（-2）范围内。

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《International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.1557-1560|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
N. Gogneau; F. Fossard; E. Monroy; S. Monnoye; H. Mank; B. Daudin;
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作者单位

Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs DRFMC/SP2M, CEA -Grenoble, 17 rue des Martyrs, 38054 -Grenoble cedex 9, France;

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原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
molecular beam epitaxy; GaN; N-polarity; quantum dots; ga surfactant effect;

机译：分子束外延； GaN； N极性；量子点； Ga表面活性剂效应;

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专利

1. Coherent Growth of AIN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy [J] . Mitsuaki Kaneko, Ryosuke Kikuchi, Hironori Okumura, Japanese journal of applied physics . 2013,第8issue2期

机译：等离子体辅助分子束外延在6H-SiC（0001）衬底上相干生长平均GaN摩尔分数高达20％的AIN / GaN短周期超晶格
2. Investigation of growth mechanisms of GaN quantum dots on (0001)AlN surface by ammonia MBE [J] . V. G. Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：氨MBE研究（0001）AlN表面GaN量子点的生长机理。
3. Step-flow growth of GaN(0001) on 4H-SiC(0001) by plasma-assisted molecular beam epitaxy [J] . Tobias Tingberg, Anders Larsson, Tommy Ive Physica status solidi . 2016,第9期

机译：等离子体辅助分子束外延在4H-SiC（0001）上逐步生长GaN（0001）
4. Plasma-assisted MBE growth of (1122)-oriented GaN/AIN quantum wells on m-sapphire [C] . L. Lahourcade, J. Renard, P. K. Kandaswamy, International Conference of Nitride Semiconductors . 2008

机译：血浆辅助MBE（1122） - 甘蓝型甘/ AIN量子井（MBE）在M-Sapphire上
5. Growth, doping and characterization of GaN and AlGaN deposited on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy for microelectronic applications. [D] . Bremser, Michael D. 1997

机译：微金属应用中通过金属有机气相外延生长在6H-SiC（0001）衬底上的GaN和AlGaN的生长，掺杂和表征。
6. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE [O] . Aleksandr I Nikiforov, Vyacheslav A Timofeev, Serge A Teys, 2012

机译：MBE在GexSi1-x层的初始生长和在GexSi1-x表面上的Ge量子点的形成
7. Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates [O] . Oikawa, Takeshi, Ishikawa, Fumitaro, Sato, Taketomo, 2005

机译：用于在GaN（0001）衬底上制造量子纳米结构的AlGaN / GaN的ECR干蚀刻和选择性MBE生长的研究
8. Development of GaN/AIN Self Assembled Quantum Dots for Room Temperature Operation of Quantum Dot Devices [R] . Petroff, P. M. 2003

机译：用于量子点器件室温操作的GaN / alN自组装量子点的研制

Growth of GaN/AIN Quantum Dots on SiC(0001) by Plasma-Assisted MBE

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