Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation

机译：图案化硼注入对碳化硅的反应离子刻蚀

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Dependence of 4H-SiC etch rate in SF_6 containing plasmas on the bulk concentration of implanted Boron as well as on post implantation regimes was investigated. The samples were selectively ion doped up to Boron bulk concentration of 1·10~(19)cm~(-3) and annealed under Ar flow at temperatures of 1500 and 1600℃ for varying durations. The difference up to 15% in etch rate of Boron doped and undoped 4H-SiC has been observed. It was found that this etch rate difference decreases with increasing of post implantation annealing time and with decreasing of Boron bulk concentration. It is assumed that this difference is defined by residual lattice damages induced during the implantation.

机译：研究了含SF_6的等离子体中4H-SiC蚀刻速率对注入的硼的体积浓度以及注入后机制的依赖性。样品被选择性地离子掺杂至硼的总浓度为1·10〜（19）cm〜（-3），并在1500和1600℃的Ar流下退火不同的时间。已经观察到硼掺杂和未掺杂的4H-SiC的蚀刻速率差异高达15％。发现该蚀刻速率差随着注入后退火时间的增加和硼体积浓度的减小而减小。假定该差异是由植入期间引起的残余晶格损伤定义的。

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来源
《International Conference on Silicon Carbide and Related Materials 2003 pt.2(ICSCRM 2003); 20031005-20031010; Lyon; FR》|2003年|P.925-928|共4页
会议地点 Lyon(FR);Lyon(FR)
作者
K.V. Vassilevski; J. Medley; A.B. Horsfall; C. M. Johnson; N. G. Wright;
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作者单位

School of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne, NE1 7RU, United Kingdom;

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原文格式 PDF
正文语种 eng
中图分类硅Si;
关键词
silicon carbide; reactive ion etching; boron implantation; etch rate;

机译：碳化硅;反应离子刻蚀;硼注入;刻蚀速率;

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2. Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching [J] . Gylfason Kristinn B., Fischer Andreas C., Gunnar Malm B., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2012,第6期

机译：使用离子注入，硅沉积和选择性硅刻蚀对硅进行逐层3D图案化的工艺注意事项
3. 3D Free-Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching [J] . Andreas C. Fischer, Lyubov M. Belova, Yuri G. M. Rikers, Advanced Functional Materials . 2012,第19期

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5. Reactive ion etching of crystalline silicon carbide and fabrication of silicon carbide devices. [D] . Yih, Pei Haur. 1994

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6. Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt [O] . Maoqiang Rui, Yaxiang Zhang, Jing Ye 2021

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7. Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation [O] . K. V. Vassilevski, J. Hedley, A. B. Horsfall, 2015

机译：用图案化硼注入活性炭对碳化硅的反应离子刻蚀

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation

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