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首页> 外文会议>International electronics manufacturing technology symposium : Manufacturing technologies-present and future >Laser Micromachining of Through-Via Interconnects in Active Die for 3-D Multichip Module
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Laser Micromachining of Through-Via Interconnects in Active Die for 3-D Multichip Module

机译：用于3-D多芯片模块的有源管芯中的贯穿孔互连的激光微加工

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One method to increase density in integrated circuits (IC) is to stack die to create a 3-D multichip module (MCM). In the past, special post wafer processing was done to bring interconnects out to the edge of the die. The die were sawed, glued, and stacked. Special processing was done to create interconnects on the edge to provide for interconnects to each of the die. These processes require an IC type fabrication facility (fab) and special processing equipment. It contrast, we have developed packaging assembly methods to created vertical through vias in bond pads of active silicon die, isolate these vias, and metal fill these vias without the use of a special IC fab . These die with through vias can then be joined and stacked to create a 3-D MCM. Vertical through vias in active die are created by laser micromachining using a Nd.YAG laser. Besides the fundamental 1064 nm (infra-red) laser wavelength of a Nd.YAG laser, modifications to our Nd.YAG laser allowed us to generate the second harmonic 532 nm (green) laser wavelength and fourth harmonic 266nm (ultra violet) laser wavelength in laser micromachining for these vias. Experiments were conducted to determine the best laser wavelengths to use for laser micromachining of vertical through vias in order to minimize damage to the active die. Via isolation experiments were done in order determine the best method in isolating the bond pads of the die. Die thinning techniques were developed to allow for die thickness as thin as 50 μm. This would allow for high 3-D density when the die are stacked. A method was developed to metal fill the vias with solder using a wire bonder with solder wire.
机译：增加集成电路（IC）密度的一种方法是堆叠裸片以创建3-D多芯片模块（MCM）。过去，需要进行特殊的晶圆后处理，以将互连引出到芯片的边缘。模具被锯切，粘合并堆叠。进行了特殊处理以在边缘上创建互连，以提供与每个管芯的互连。这些过程需要IC类型的制造设备（fab）和特殊的处理设备。相反，我们已经开发了封装组装方法，以在有源硅芯片的键合焊盘中创建垂直通孔，隔离这些通孔，并在不使用特殊IC晶圆厂的情况下对这些通孔进行金属填充。然后可以将这些带有通孔的管芯连接起来并堆叠，以创建3-D MCM。有源管芯中的垂直通孔是通过使用Nd.YAG激光器进行激光微加工而创建的。除了Nd.YAG激光器的基本1064 nm（红外）激光波长之外，对我们的Nd.YAG激光器进行的修改还使我们能够产生532 nm（绿色）二次谐波激光波长和266nm（超紫）波长第四谐波。在这些通孔的激光微加工中。进行实验以确定用于垂直通孔的激光微加工的最佳激光波长，以最大程度地减少对有源管芯的损坏。进行了隔离实验，以确定隔离管芯焊盘的最佳方法。模具减薄技术被开发出来以允许厚度薄至50μm。当管芯堆叠时，这将允许高3D密度。开发了一种使用带有焊锡丝的焊线机将焊锡金属填充到通孔中的方法。

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