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Effect of Nano-structures on the Optical Features of Hydrogenated Amorphous Si Films

机译:纳米结构对氢化非晶硅薄膜光学特性的影响

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Hydrogenated amorphous Si (a-Si:H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques, and the effect of nano-structure on the photoluminescence (PL) phenomena of the films was investigated. The films, which were prepared at R.T., contain both amorphous and crystalline phases of 1 ~ 3 nm size nano-crystallites with {100} orientation preference while the films prepared at 500℃ are composed of about 6 nm and 150 nm size crystallites. The former exhibit a strong PL intensity near blue light region, while the latter exhibiting little PL phenomena; also, the optical band gap of the former was calculated at 4.2 eV.
机译:采用等离子增强化学气相沉积(PECVD)技术制备了氢化非晶硅(a-Si:H)薄膜,研究了纳米结构对薄膜光致发光(PL)现象的影响。在R.T.制备的薄膜包含1〜3 nm尺寸的纳米晶体的非晶相和结晶相,具有{100}取向优先性,而在500℃下制备的薄膜由约6 nm和150 nm尺寸的晶体组成。前者在蓝光区域附近表现出很强的PL强度,而后者则几乎没有PL现象。同样,前者的光学带隙经计算为4.2 eV。

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