TWO-DIMENSIONAL SIMULATION OF AlGaAs/InGaAs/GaAs PHEMTs

机译：AlGaAs / InGaAs / GaAs PHEMT的二维模拟

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A two-dimensional energy transport model for the pseudomorphic high electron mobility transistor (PHEMT) is described. The calculation is based upon self-consistent solving of the hydrodynamic equations (continuity equation and energy transport equation) in conjunction with Poisson's equation and Schrodinger's equation. Schrodinger's equation is solved in one-dimensional slices perpendicular to the interface. The model accounts for hot electron effects, degeneracy, surface-states effects, real space transfer, quantum effects, and buffer injection phenomena. The results obtained using this model for a 0.25 μm gate length delta-doped AlGaAs/InGaAs/GaAs PHEMT are found to agree very well with those obtained from experimental device.

机译：描述了用于伪高电子迁移率晶体管（PHEMT）的二维能量传输模型。该计算基于结合泊松方程和薛定inger方程的流体力学方程（连续性方程和能量传输方程）的自洽解。薛定inger方程是在垂直于界面的一维切片中求解的。该模型考虑了热电子效应，简并，表面态效应，实际空间转移，量子效应和缓冲剂注入现象。使用该模型获得的栅极长度为0.25μm的AlGaAs / InGaAs / GaAs PHEMT的结果与从实验装置获得的结果非常吻合。

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《International Symposium on Microelectronics Technology and Devices(SBMICRO 2002); 2002; Porto Alegre; BR》|2002年|P.63-71|共9页
会议地点 Porto Alegre(BR);Porto Alegre(BR);Porto Alegre(BR);Porto Alegre(BR)
作者
Paulo Cesar Miranda Machado;
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Escola de Engenharia Eletrica, UFG, C.P.131, 74001-970, Goiania, GO, Brazil;

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正文语种 eng
中图分类材料;
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专利

1. Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics [J] . Mironova M. S., Zubkov V. I., Dudin A. L., Semiconductors . 2018,第4期

机译：GaAs / Ingaas / Algaas异质结构光致发光光谱的自一致性模拟及其在Phemt结构诊断中的应用
2. High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimised manufacturing process for Ka-band applications [J] . Sung-Jin Cho, Cong Wang, Nam-Young Kim Microelectronic Engineering . 2014,第jana期

机译：高功率密度AlGaAs / InGaAs / GaAs PHEMT，采用针对Ka频段应用的优化制造工艺
3. MICROWAVE NOISE MODELING FOR ALGAAS/INGAAS/GAAS PHEMTS [J] . XIUPING LI, JIANJUN GAO, GEORG BOECK Microwave Journal . 2006,第12期

机译：ALGAAS / INGAAS / GAAS光纤的微波噪声建模
4. Two-dimensional simulation of AlGaAs/InGaAs/aAs PHEMTs [C] . Paulo Cesar Miranda Machado Symposium on Microelectronics Technology and Devices . 2002

机译：Algaas / Ingaas / AAS PHEMT的二维模拟
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. Simulation and design of AlGaAs/InGaAs CCDs based on PHEMT technology [O] . Tan, HT, Hunter, IC, Snowden, CM 2007

机译：基于PHEMT技术的AlGaAs / InGaAs CCD的仿真与设计
8. Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies [R] . Goodhue, W. D., Donnelly, J. P., Wang, C. A., 1991

机译：单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列，具有超过50％的差分量子效率

TWO-DIMENSIONAL SIMULATION OF AlGaAs/InGaAs/GaAs PHEMTs

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