• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International Symposium on Pits and Pores II: Formation, Properties, and Significance for Advanced Materials, Oct 22-27, 2000, Phoenix, AZ >A MATHEMATICAL MODEL FOR THE GROWTH OF ALUMINUM ETCH TUNNELS
【24h】

A MATHEMATICAL MODEL FOR THE GROWTH OF ALUMINUM ETCH TUNNELS

机译：铝刻蚀隧道生长的数学模型

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A simulation of the growth of pits on aluminum during anodic etching in hot chloride solutions was developed, based on equations for mass transport and for the potential-controlled removal of chloride ions from the dissolving surface. The latter process initiates oxide passivation. Etch pits transform into tunnels which at first maintain parallel sidewalls and then begin to taper. The predicted shapes agree closely with those measured experimentally. Tunnel formation is possible only when the potential during etching is within 20-30 mV of the repassivation potential, so that the dissolving area nearly constant during pit growth. In the tapered-width regime of tunnel growth, the AlC1_3 concentration at the end of the tunnel is near saturation, despite the absence of precipitation from the model equations. The model shows that this condition derives from the low conductivity of the concentrated solution, coupled with the sensitivity of passivation to the potential.
机译：基于质量传输方程和从溶解表面电位控制去除氯离子的方程，开发了在热氯化物溶液中阳极蚀刻过程中铝上凹坑生长的模拟。后一过程引发氧化物钝化。腐蚀坑转变成隧道，隧道首先保持平行的侧壁，然后开始逐渐变细。预测的形状与实验测量的形状非常吻合。仅当蚀刻过程中的电位在钝化电位的20-30 mV之内时才可能形成隧道，从而在凹坑生长期间溶解面积几乎恒定。在隧道宽度逐渐减小的情况下，尽管模型方程中没有降水，但隧道尽头的AlC1_3浓度接近饱和。该模型表明，这种情况源于浓溶液的低电导率，以及钝化对电势的敏感性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号