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首页> 外文会议>International Symposium on Rapid Thermal and Other Short-Time Processing Technologies II, Mar 24-29, 2001, Washington DC >STATE OF THE ART TECHNIQUES FOR ULTRA-SHALLOW JUNCTION FORMATION
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STATE OF THE ART TECHNIQUES FOR ULTRA-SHALLOW JUNCTION FORMATION

机译：超浅结形成的最新技术

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摘要

According to the 1999 International Technology Roadmap for Semiconductors the source/drain extension junction will be in the range of a few tens of nanometers for the up-coming 130 nm and 100 nm nodes. Although the junctions have to become shallower, a decreasing sheet resistance is also required. This paper summarizes the latest results for ultra-low energy implants employing conventional beamline systems. The formation of ultra-shallow junctions is influenced by several important factors, among these arc: Species, dose, and energy of the implant; a controlled gaseous ambient; and a controlled and reproducible thermal budget during rapid thermal annealing. All the data are analyzed and discussed with respect to the junction depth versus sheet resistance figure. The results indicate that BF2 produces shallower junctions with lower sheet resistance than energy-equivalent boron implants. This is shown to result from both a more efficient annealed dopant profile (i.e. more 'box-shaped') and a higher electrical activation. Other parameters that improve the R_s vs. X_J curve (i.e. move the curve "south-west") are limited gaseous concentration processing for oxygen and faster ramp-up and cool-down rates due to reduced diffusion.
机译：根据1999年国际半导体技术路线图，对于即将到来的130 nm和100 nm节点，源/漏扩展结的范围将在几十纳米的范围内。尽管结必须变浅，但还需要减小薄层电阻。本文总结了采用常规束线系统的超低能量植入物的最新结果。超浅结的形成受几个重要因素的影响，其中包括：植入物的种类，剂量和能量；受控的气体环境；以及在快速热退火过程中可控且可重现的热预算。关于结深度与薄层电阻的关系图对所有数据进行了分析和讨论。结果表明，与能量等效的硼植入物相比，BF2产生的结更浅，薄层电阻更低。示出这是由于更有效的退火掺杂剂分布（即，更多的“盒形”）和更高的电激活所导致的。改善R_s对X_J曲线的其他参数（即，将曲线向“西南”移动）是用于氧气的有限气体浓度处理，并且由于减少的扩散而具有更快的加速和冷却速率。

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