Heterostructure Design Optimization for Laser Cooling of GaAs

机译：GaAs激光冷却的异质结构设计优化

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Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.

机译：在薄GaAs / GaInP异质结构中掺杂包层的掺杂，取代了能带不连续性，改变了有源GaAs区域中的载流子浓度，并改变了异质界面的质量。结果，双重异质结构中的内部量子效率以及因此的外部量子效率受到影响。通过调整包层的掺杂水平和类型（n或p），系统地研究了GaAs / GaInP异质结构的界面质量。提出了用于激光冷却应用的最佳结构。

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来源
《Laser Cooling of Solids; Proceedings of SPIE-The International Society for Optical Engineering; vol.6461》|2007年|64610G|
会议地点 San JoseCA(US)
作者
B. Imangholi; C. Wang; E. Soto; M. Sheik-Bahae; A. Stintz; K. Malloy; N. Nuntawong; R. Epstein;
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作者单位

Department of Physics and Astronomy, University of New Mexico, Albuquerque NM 87131, USA;

Center For High Technology Materials, MSC04 2710, 1313 Goddard SE, Albuquerque NM 87106, USA;

Los Alamos National Laboratory, Los Alamos NM 87545, USA;

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原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
关键词
semiconductor laser cooling; external quantum efficiency; internal quantum efficiency; bandgap discontinuity; double heterostructure design; GaAs/GaInp, GaAs/AlGaAs;

机译：半导体激光冷却；外部量子效率内部量子效率带隙不连续性双异质结构设计； GaAs / GaInp，GaAs / AlGaAs;

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1. Growth and Optimization of Extremely High-Pulse-Power Graded-lndex Separate Confinement Heterostructure Quantum Well AIGaAs/lnGaAs Diode Lasers with Broadened Waveguides [J] . J.Z.Li, R.U.Martinelli, V.B.Khalfin Journal of Electronic Materials . 2005,第2期

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2. On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates [J] . Zhukov A. E., Asryan L. V., Semenova E. S., Semiconductors . 2015,第7期

机译：GaAs衬底上InAlGaAs / AlGaAs激光异质结构中非对称势垒层的优化
3. Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide [J] . Shashkin I. S., Leshko A. Y., Nikolaev D. N., Semiconductors . 2020,第4期

机译：基于Algaas / GaAs异质结构的MESA条纹设计单模激光器（1050nm），具有超窄波导
4. Heterostructure Design Optimization for Laser Cooling of GaAs [C] . B. Imangholi, C. Wang, E. Soto, Conference on Laser Cooling of Solids . 2007

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5. Performance Evaluation of Plate-fin and Pin-fin Heat Sinks for The Application of Oil Immersion Cooling and Design Optimization of Dynamic Cold Plate for The Application of Warm Water cooling. [D] . Soni, Parth. 2016

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6. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

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7. Modulation Bandwidth Enhancement In Single Quantum Well GaAs Lasers Through A Novel Design Of Graded Index Separate Confinement Heterostructure [O] . Chen, T. R., Zhao, B., Yamada, Y., 1992

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8. Effects of Epitaxial Lift-off on Interface Recombination and Laser Cooling in GaInP/GaAs Heterostructures. [R] . B. Imangholi M. Sheik-Bahae M. P. Hasselbeck R. I. Epstein S. Kurtz 2005

机译：外延剥离对GaInp / Gaas异质结中界面复合和激光冷却的影响。

Heterostructure Design Optimization for Laser Cooling of GaAs

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