Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm

机译：减少300毫米植入物监控晶片成本的突破性进展

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Abstract: The semiconductor industry has been full of news regarding the transition to 300 mm wafers. In 1998, SEMICONDUCTOR300 (SC300) was the first to demonstrate the capability to produce integrated products on 300 mm wafers. To meet the challenge of maintaining quality while simultaneously reducing cost and ramping SC300 into pilot manufacturing, the authors have investigated the use of an overlay implant technique. A single 300 mm wafer is used to collect particle, high dose, and low dose information from a Eaton GSD HE-3 ion implanter. The implants, a high dose As$PLU 80 KeV 3E14 followed by a low dose As$PLU 60 KeV 3E11 damage implant, are measured using a KLA/Tencor Rs100 sheet resistance measurement tool with a 3 mm edge exclusion. In addition to verifying the technique at 300 mm, the paper presents overlay implant data collected using externally reclaimed wafers, currently one third the cost of prime 300 mm wafers, and explores the possibility of reusing implanted monitor wafers by re-annealing the wafers and repeating the low dose damage implant. Initial data is also presented for implants performed on the backside of 300 mm wafers. !9

机译：摘要：半导体行业一直充满着有关向300 mm晶圆过渡的新闻。 1998年，SEMICONDUCTOR300（SC300）首次展示了在300 mm晶圆上生产集成产品的能力。为了应对在保持质量的同时降低成本并使SC300逐渐进入试生产的挑战，作者研究了覆盖注入技术的使用。一个300 mm的晶圆用于从Eaton GSD HE-3离子注入机收集颗粒，高剂量和低剂量信息。使用KLA / Tencor Rs100薄层电阻测量工具（边缘排除在外）3mm，测量高剂量As $ PLU 80 KeV 3E14植入物，然后低剂量As $ PLU 60 KeV 3E11损伤植入物。除了在300 mm处验证该技术外，本文还介绍了使用外部回收的晶片收集的覆盖植入物数据，目前是300 mm原始晶片成本的三分之一，并探讨了通过重新退火并重复使用晶片来重复使用植入的监控器晶片的可能性。低剂量损伤植入物。还提供了在300毫米晶圆背面进行植入的初始数据。！9

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《In-Line Methods and Monitors for Process and Yield Improvement》|1999年|p.77-87|共11页
会议地点 Santa Clarar CA(US)
作者
Jason S. Zeakes; Semiconductor 300 Corp.; Dresden; Germany; Terry A. Breeden; Semiconductor 300 Corp.; Dresden; Germany.;
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1. Design-Dependent Process Monitoring for Wafer Manufacturing and Test Cost Reduction [J] . Chan T.-B., Pant A., Cheng L., Semiconductor Manufacturing, IEEE Transactions on . 2012,第3期

机译：晶圆生产的设计相关过程监控和测试成本降低
2. Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60nm CMOS technology on 300mm wafer process [J] . Imamoto Takuya, Ma Yitao, Muraguchi Masakazu, Japanese journal of applied physics . 2015,第4s期

机译：在300mm晶圆工艺上采用60nm CMOS技术制造的具有可调阈值电压的垂直MOSFET的低频噪声降低
3. Reduction of Airborne Molecular Contamination on 300 mm FrontOpening Unified POD (FOUP) and Wafers Surface by VacuumTechnology [J] . Philippe MAQUIN, Hisanori KAMBARAa Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2009,第Null期

机译：通过真空技术减少300毫米FrontOpening统一POD（FOUP）和晶圆表面上的空气传播分子污染
4. Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm [C] . Jason S. Zeakes, Terry A. Breeden Conference on in-line methods and monitors for process and yield improvement . 1999

机译：植入物监测晶圆成本降低300毫米的开创性突破
5. Cost-Effective Integrated Wireless Monitoring of Wafer Cleanliness Using SOI Technology. [D] . Pandit, Vedhas. 2010

机译：采用SOI技术的经济高效的晶圆清洁度集成无线监控。
6. Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers [O] . Ayumi Onaka-Masada, Takeshi Kadono, Ryosuke Okuyama, 2020

机译：使用烃类分子离子植入双外延Si晶片减少CMOS图像传感器像素中的暗电流
7. Process Integration of Single-Wafer Technology in a 300-mm Fab, Realizing Drastic Cycle Time Reduction With High Yield and Excellent Reliability [O] . Shuji Ikeda, Senior Member, Kazunori Nemoto, 2008

机译：300毫米晶圆厂单晶圆技术的工艺集成，实现高产量和高可靠性的大幅缩短周期时间

Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm

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