Effect of reticle manufacturing quality on full chip optical proximity correction

机译：光罩制造质量对全芯片光学接近度校正的影响

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Abstract: Critical Dimensions (CD) are measured on reticles which are written incorporating an optical proximity correction for pitch dependent linewidth bias. Reticles are manufactured on different generations of laser write tools and the result in terms of mean ann range of dimensions compared. Lithography simulation is used to test the response of reticle CD variation at wafer level. !5

机译：摘要：关键尺寸（CD）是在标线板上测量的，标线包含针对间距相关的线宽偏差的光学接近校正。光罩是在不同代的激光写入工具上制造的，其结果在尺寸的平均和范围上进行了比较。光刻模拟用于测试晶圆级别的标线片CD变化的响应。！5

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来源
《Lithography for Semiconductor Manufacturing》|1999年|p.197-201|共5页
会议地点 Edinburgh(GB)
作者
Brian Martin; Mitel Semiconductor; Plymouth; Devon; United Kingdom; Graham G. Arthur; Rutherford Appleton Lab.; Didcot Oxon; United Kingdom.;
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正文语种 eng
中图分类半导体技术;
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专利

1. Restricted Optical Proximity Effect Correction Pattern Generation Based on Optical Proximity Effect Correction-Design for Manufacturability Rule in Model-Based Optical Proximity Effect Correction [J] . Katsuhiko Harazaki, Tasuku Yoshioka, Kiyoshige Ohmori, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第9BPt1期

机译：基于光学邻近效应校正的受限光学邻近效应校正模式生成-基于模型的光学邻近效应校正中的可制造性规则设计
2. Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process [J] . Keiichiro Hitomi, Scott Halle, Marshal Miller, Journal of microanolithography, MEMS, and MOEMS . 2016,第3期

机译：通过10nm节点工艺的混合光学邻近效应校正建模和收缩校正技术提高光学邻近效应校正模型的准确性
3. Multilevel Full-Chip Gridless Routing With Applications to Optical-Proximity Correction [J] . Chen T.-C., Chang Y.-W. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 2007,第6期

机译：多级全芯片无网格路由及其在光学邻近校正中的应用
4. Effect of reticle manufacturing quality on full chip optical proximity correction [C] . Brian Martin, Graham G. Arthur Conference on lithography for semiconductor manufacturing . 1999

机译：掩模版制造质量对全芯片光学邻近校正的影响
5. Fast and accurate lithography simulation and optical proximity correction for nanometer design for manufacturing [D] . Yu, Peng 2009

机译：快速准确的光刻模拟和光学接近度校正，可用于制造的纳米设计
6. Optical Monitoring of the Production Quality of Si-Nanoribbon Chips Intended for the Detection of ASD-Associated Oligonucleotides [O] . Kristina A. Malsagova, Tatyana O. Pleshakova, Vladimir P. Popov, 2021

机译：用于检测ASD相关寡核苷酸的Si-NanoRibbon芯片的光学监测
7. Effect of Reticle CD Uniformity on Wafer CD Uniformity in the Presence of Scattering Bar Optical Proximity Correction [O] . Konstantinos Adam Robert, Robert Socha, Mircea Dusa, 1998

机译：在存在散射棒光学邻近校正的情况下，掩模版CD均匀性对晶片CD均匀性的影响

Effect of reticle manufacturing quality on full chip optical proximity correction

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