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Optimization of the Ion-Cut Process in Si and SiC

机译：Si和SiC中离子切割工艺的优化

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摘要

H~+-implantation is the basis for an ion-cut process, which combines hydrophilic wafer bonding, to produce heterostructures over a wide range of materials. This process has been successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of implantation to produce thin-film separation was studied by investigation of H~+-induced exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen chemistry from that of implant damage. Damage is manipulated independently of H~+ dosage by a variety of techniques ranging from elevated temperature irradiation to a two-step implantation scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate that such schemes can significantly reduce the critical dose for exfoliation.
机译：H +注入是离子切割工艺的基础，该工艺结合了亲水性晶圆键合，可在多种材料上产生异质结构。此工艺已成功应用于Si中，以生产商用绝缘体上硅材料。通过研究H〜+诱导的Si和SiC剥离，研究了注入产生薄膜分离的功效。进行了实验以将氢化学的影响与植入物损坏的影响分开。可以通过多种技术来控制损伤，而不受H +剂量的影响，包括从高温辐照到Si中的两步注入方案以及在SiC中使用沟道离子注入等多种技术。结果将表明，这种方案可以显着减少脱落的临界剂量。

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