Silicon Carbide (SiC) is considered as the wide band gap semiconductor material that can presently compete with silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of extreme importance for designing and analyzing converter circuit, in particular, if comparisons with Si devices should be performed. In this paper, three kinds of Silicon Carbide JFET samples were characterized at temperatures up to 225 deg C. The characterizations are based on the DC (Current -^sVoltage) characteristic measurements using a curve tracer and on the AC (Capacitance -^sVoltage) measurements using an impedance analyzer and on the switching characteristics using un clamped inductive load. The purpose is to establish an analytical model that is based on the physical and behavioural analysis of the SiC-JFET, taking into account the two physical channels and the influence of temperature. As shown, the model is validated with both steady state and transient characteristics. Validation of the model shows excellent agreement with measured data. The physical approach implemented in this model is crucial to describe the transient behaviour over a wide range of application conditions and temperatures. This model will be used later in the design of a power converter.
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