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首页> 外文会议>IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC >IMPROVEMENT IN STABILIZED EFFICIENCY OF a-Si:H SOLAR CELLS THROUGH OPTIMIZED p/i-INTERFACE LAYERS
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IMPROVEMENT IN STABILIZED EFFICIENCY OF a-Si:H SOLAR CELLS THROUGH OPTIMIZED p/i-INTERFACE LAYERS

机译：通过优化的p / i界面层提高a-Si：H太阳能电池的稳定效率

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摘要

This paper focuses on the relation between p/i-interface layer properties and the light stability of the corresponding solar ceils. In a series of cells containing different p/i-interface structures large differences in relative degradation were found. These differences are explained by a redistribution of the electric field due to the insertion of different p/i-interface layers leading to different collection from the i-layer volume in the course of i-layer degradation. Based on this hypothesis, we developed an optimized design of the p/i-interface region, which increases the initial efficiency without introducing additional degradation. a-Si:H/a-Si:H stacked cells including this new design exhibit only 12 % degradation after 300 hours of one sun light-soaking. A stabilized efficiency of 9 % was achieved.
机译：本文着重于p / i界面层特性与相应太阳能电池的光稳定性之间的关系。在一系列包含不同p / i界面结构的电池中，发现相对降解存在较大差异。这些差异可以通过电场的重新分布来解释，这是由于插入了不同的p / i界面层导致在i层降级的过程中从i层体积收集的电荷不同而引起的。基于此假设，我们开发了p / i界面区域的优化设计，该设计可以提高初始效率，而不会引起额外的退化。包括这种新设计的a-Si：H / a-Si：H堆叠式电池在经过300小时的一次日光浸泡后仅表现出12％的降解。达到了9％的稳定效率。

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