• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >Adhesion Promotion Study on 0.13 um SiO:C:H Low k /Copper Damascene Process
【24h】

Adhesion Promotion Study on 0.13 um SiO:C:H Low k /Copper Damascene Process

机译：0.13 um SiO：C：H低k /铜镶嵌工艺的附着力研究

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Low k material delamination during Cu-CMP is one of the major obstructions for low k /Cu integration. Six pre-ARC treatments on SiO:C:H low k dielectric which were low temperature N2O plasma treatment 1 minutes, 2 minutes and high temperature N2O plasma treatment 10 seconds,30 seconds and 1 minute were tried to solve the Cu-CMP peeling. Only the one with low temperature N2O treatment can solve the Cu-CMP edge delamination problem by reducing the surface carbon content via breaking the Si-CH3 and Si-C bonding. The reason why the high temperature N2O treatment dose not work as the low temperature one is that the Si-CH3 bonding was severely damaged and changed to Si-COOH bonding . The acidified surface was not good for the adhesion of the following ARC material.
机译：Cu-CMP过程中的低k材料分层是低k / Cu集成的主要障碍之一。为解决Cu-CMP剥离问题，尝试了在SiO：C：H低k电介质上进行六次ARC前处理：低温N2O等离子体处理1分钟，2分钟和高温N2O等离子体处理10秒，30秒和1分钟。只有经过低温N2O处理的材料才能通过破坏Si-CH3和Si-C键来减少表面碳含量，从而解决Cu-CMP边缘脱层的问题。高温N 2 O处理不能像低温N 2 O处理那样起作用的原因是Si-CH 3键被严重破坏并变为Si-COOH键。酸化的表面不利于以下ARC材料的粘附。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号