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OPTIMIZATION RULES AND STEPS IN FABRICATION OF STABILIZED HIGH-EFFICIENCY A-SI MODULES

机译:稳定高效A-Si模块制造中的优化规则和步骤

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It was of interest to define some optimization criteria such as the highest attainable final-to-initial conversion efficiency ratio and/or the highest stabilized efficiency (or power) of a-Si PV modules as their large initial and overall degradation in efficiency during exposure to solar radiation has been the main drawback to their competitiveness and wider acceptance at the energy market. Some basic rules in technological procedures have been found and proposed to be followed in order to obtain optimal results. As the deposition of p-i-n junctions in a PECVD reactor is the most critical step in the production of efficient a-Si modules, in this work we stressed the importance of avoidance of any carbon doping in the i-layer, trying to reach the lowest attainable i-layer growth rate combined with hydrogen dilution, and maintaining the deposition temperature below 180oC. There is also a narrow optimal window in thickness of the i-layer providing both low degradation and high enough stabilized power. Some optimized procedures produce a high increase in the open-circuit voltage provoking even a "reverse" Staebler- Wronski effect over the whole stabilizing period. Results of a great number of long-term degradation experiments with variety of modules under open-circuit and under load support the basic optimization rules. Benefits or disadvantages of single junction vs. tandem junction modules are also discussed in respect to technological and economic criteria.
机译:它感兴趣的是,定义一些优化标准,例如最高可达到的最终的最终转换效率比和/或最高稳定的效率(或功率)的A-Si PV模块,因为它们在曝光期间效率的大初始和总体降低对于太阳辐射来说,他们的竞争力和在能源市场上更广泛的验收的主要缺点。已经发现了技术程序中的一些基本规则,并提出遵循以获得最佳结果。随着PECVD反应器中的销结的沉积是高效A-Si模块的最关键步骤,在这项工作中,我们强调了避免在I层中掺杂的任何碳的重要性,试图达到最低可达到的碳I层生长速率与氢气稀释相结合,并将沉积温度保持在180℃以下。 I层的厚度也存在狭窄的最佳窗口,可提供低劣的降解和足够高的稳定功率。一些优化的程序在开启电路电压中产生高增加,甚至在整个稳定期间的“反向”硬质杂交效应。在开路和负载下的各种模块和负载下的多数长期退化实验的结果支持基本优化规则。在技​​术和经济标准方面还讨论了单交界处与串联连接模块的益处或缺点。

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