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首页> 外文会议>European photovoltaic solar energy conference >HIGH QUALITY SURFACE PASSIVATION AND HETEROJUNCTION FABRICATION BY VHF-PECVD DEPOSITION OF AMORPHOUS SILICON ON CRYSTALLINE SI: THEORY AND EXPERIMENTS
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HIGH QUALITY SURFACE PASSIVATION AND HETEROJUNCTION FABRICATION BY VHF-PECVD DEPOSITION OF AMORPHOUS SILICON ON CRYSTALLINE SI: THEORY AND EXPERIMENTS

机译：结晶SI上VHF-PECVD非晶硅的高品质表面钝化和异质结制备：理论与实验

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Hydrogenated Amorphous Silicon (a-Si:H) deposited by Very High Frequency Plasma EnhancedChemical Vapor Deposition (VHF PECVD) proves to be very efficient in passivating crystalline silicon surfaces. Tocharacterize these a-Si:H/c-Si structures, the Quasi Steady State (QSSPC) and Photoconductance Decay (PCD) methodsare used, giving the effective lifetime and the related effective surface recombination velocity Seff as a function of theexcess carrier density (ECD). We show that, both on n- and p-type c-Si, surface recombination velocities (S_(eff)) lowerthan 10 cm/s are reached using passivating of stacks of intrinsic and doped a-Si:H layers. We show how the S_(eff)=f(ECD)results can be described by a model based on recombination through amphoteric defect states at the a-Si:H/c-Si interface.This model is also used to estimate charges and defect densities obtained by depositing intrinsic and doped layers on ptypec-Si. High efficiency a-Si:H/c-Si heterojunction solar cells are shown to benefit directly from the development ofintrinsic and doped layers. Thanks to the excellent surface passivation, high V_(oc)’s are reached, on both p- (690mV) andn-type (713mV) c-Si and a conversion efficiency up to 19.1% is achieved for cells prepared on flat n-type Si wafers.Finally, we show how the dark recombination current density (J_0) of the final solar cell on p- and n-type c-Si wafer isdirectly related to the value of its V_(oc), with a common ideality factor n of 1.2 for all devices.
机译：高频等离子体增强沉积的氢化非晶硅（a-Si：H） 事实证明，化学气相沉积（VHF PECVD）在钝化晶体硅表面方面非常有效。到 表征这些a-Si：H / c-Si结构，准稳态（QSSPC）和光电导衰减（PCD）方法 给出了有效寿命和相关的有效表面复合速度Seff的函数。 多余的载流子密度（ECD）。我们显示，在n型和p型c-Si上，表面重组速度（S_（eff））都较低 使用本征和掺杂的a-Si：H层的叠层进行钝化，可以达到10 cm / s以上的速度。我们展示了S_（eff）= f（ECD） 结果可通过基于a-Si：H / c-Si界面两性缺陷状态重组的模型来描述。 该模型还用于估计通过在ptype上沉积本征层和掺杂层而获得的电荷和缺陷密度 硅高效率的a-Si：H / c-Si异质结太阳能电池已显示出直接受益于这种材料的发展 本征和掺杂层。由于出色的表面钝化，在p-（690mV）和p-（690mV）上均达到了很高的V_（oc）。 n型（713mV）c-Si，在平坦的n型Si晶片上制备的电池的转换效率高达19.1％。 最后，我们展示了p型和n型c-Si晶片上最终太阳能电池的暗复合电流密度（J_0）如何 与V_（oc）的值直接相关，所有设备的理想因子n为1.2。

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