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首页> 外文会议>European Photovoltaic Solar Energy Conference >SURFACE PASSIVATION OF MULTI-CRYSTALLINE SILICON BY MULTI-LAYER DEPOSITION OF HYDROGENATED AMORPHOUS SILICON
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SURFACE PASSIVATION OF MULTI-CRYSTALLINE SILICON BY MULTI-LAYER DEPOSITION OF HYDROGENATED AMORPHOUS SILICON

机译：多晶硅通过氢化非晶硅多层沉积的多晶硅表面钝化

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摘要

Multi-layer plasma-enhanced chemical vapour deposition is shown to effectively passivate the surface of both n- and p-type 1.0 Ωcm mc-Si using very-thin, intrinsic a-Si:H layers. This technique compensates for the difficulty in obtaining full coverage of the mc-Si surface across crystallographic dislocations and an abrupt interface with no epitaxial growth of the a-Si:H is achieved. Deposition of a thin passivating a-Si:H layers permitted the subsequent application of the a-Si:H heterostructure design to the mc-Si surface, separating the emitter from the base wafer. Good surface passivation is achieved for both n- and p-based heterostructures on mc-Si surface when using 5 nm and 10 nm a-Si:H(i) inter-layers, and is further described by relatively low current density at the interface and a correspondingly high implied open-circuit voltages in comparison to standard PECVD. These heterostructures represent a significant advantage over other passivation methods due to the inherently low processing temperature below 250°C and without the need for high temperature emitter diffusion. The a-Si:H heterostructure was applied to 100μm mc-Si wafers to further demonstrate the significant benefits obtained from low temperature passivation and emitter formation using a-Si:H.
机译：多层等离子体增强的化学气相沉积显示使用非常薄的内在A-Si：H层有效地钝化N-和P型1.0Ωcmmc-si的表面。该技术补偿难以在晶状体脱位上获得MC-Si表面的完全覆盖，并且易于实现具有A-Si：H的外延生长的突然界面。沉积薄钝化A-Si：H层允许随后将A-Si：H异质结构设计施加到MC-Si表面，将发射器与基底晶片分开。在使用5nm和10nm A-Si：H（i）间层时，MC-Si表面上的N-和P基因异质结构均可实现良好的表面钝化，并通过界面处的相对低的电流密度进一步描述与标准PECVD相比，相应高隐含的开路电压。由于固有的低处理温度低于250°C并且不需要高温发射极扩散，这些异质结构代表了其他钝化方法的显着优势。将A-Si：H异质结构施加到100μMMC-Si晶片中，以进一步证明使用A-Si：H从低温钝化和发射极形成获得的显着益处。

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