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首页> 外文会议>European photovoltaic solar energy conference >PREPARATION OF POLY-Si THIN FILMS BY ALUMINIUM INDUCED CRYSTALLIZATION OF GLASS/Al/a-Si:H WITH DIFFERENTLY FORMED INTERFACIAL ALUMINUM OXIDE LAYERS
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PREPARATION OF POLY-Si THIN FILMS BY ALUMINIUM INDUCED CRYSTALLIZATION OF GLASS/Al/a-Si:H WITH DIFFERENTLY FORMED INTERFACIAL ALUMINUM OXIDE LAYERS

机译：铝诱导的玻璃/ Al / a-Si：H的结晶化及不同形式的界面氧化铝层的制备

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摘要

In this work, the study of the influence of differently formed interfacial aluminium oxide layers on thestructural properties of poly-Si thin films prepared by Aluminium Induced Crystallization (AIC) of a-Si:H isreported. The Al layers were deposited by evaporation or by magnetron sputtering on an unheated substrate or at300°C substrate temperature. Different methods for preparation of the aluminium oxide were applied: exposure of theAl film to air or sputtering of an Al_2O_3 target. The a-Si:H films were deposited by magnetron sputtering. Afterannealing in H_2 or in air, the resulting poly-Si films were characterized by microprobe Raman spectroscopy, opticalmicroscopy, SEM, EDS and XRD. The Al oxide layer topographies were studied by AFM. The preparation of poly-Si films with good structural quality by AIC of glass/Al/Al_2O_3/a-Si:H stacks with a sputtered interfacial oxide is alsodescribed.
机译：在这项工作中，研究不同形成的界面氧化铝层对合金的影响。 a-Si：H的铝诱导结晶（AIC）制备的多晶硅薄膜的结构特性为 报告。通过蒸发或磁控溅射将Al层沉积在未加热的基材上或 300°C的基板温度。采用了不同的氧化铝制备方法： 铝膜对空气或Al_2O_3靶的溅射。通过磁控溅射沉积a-Si：H膜。后 在H_2或空气中退火，所得的多晶硅膜通过微探针拉曼光谱，光学 显微镜，SEM，EDS和XRD。通过原子力显微镜研究了氧化铝层的形貌。制备聚 通过AIC的具有溅射界面氧化物的玻璃/ Al / Al_2O_3 / a-Si：H叠层的AIC具有良好的结构质量的Si膜也是 描述。

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