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首页> 外文会议>European photovoltaic solar energy conference >IMPROVEMENT OF EPITAXIALLY GROWN POLY-SI THIN-FILM SOLAR CELLS ON GLASS BY RAPID THERMAL ANNEALING
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IMPROVEMENT OF EPITAXIALLY GROWN POLY-SI THIN-FILM SOLAR CELLS ON GLASS BY RAPID THERMAL ANNEALING

机译：快速热退火技术改善玻璃上表观生长的多晶硅薄膜太阳能电池

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The impact of rapid thermal annealing (RTA) on large-grained polycrystalline Si thin-film solar cellson glass was investigated. The solar cells consist of absorber layers homo-epitaxially grown at 600°C by electronbeam evaporation on polycrystalline Si seed layers. Due to the thermal limitations of the preparation processes by theglass the absorber layers suffer from a structural imperfectness. Short high-temperature treatments improve thestructural properties of the layers and therefore the solar cells. Here, we discuss the influence of the RTA temperatureand duration on the solar cell, especially the open-circuit voltage. Annealing temperatures between 800 and 1000°Cwere applied for 5 to 300 s. The balance between high temperatures and their duration is very important and bestresults were achieved using 950°C for 200s as plateau parameter. We also studied the impact of RTA on thecontamination levels determined by secondary ion mass spectrometry. Only a slight influence of the RTA was foundon the levels of boron, aluminium and oxygen.
机译：快速热退火（RTA）对大晶粒多晶硅薄膜太阳能电池的影响 在玻璃上进行了调查。太阳能电池由吸收层组成，吸收层由电子在600°C均匀外延生长 多晶硅籽晶层上的电子束蒸发。由于制备过程的热量限制， 玻璃吸收层的结构不完善。短暂的高温处理可以改善 层的结构特性以及因此的太阳能电池。在这里，我们讨论RTA温度的影响 以及太阳能电池的持续时间，尤其是开路电压。退火温度在800至1000°C之间 施加5到300秒。高温及其持续时间之间的平衡非常重要且最佳 使用950°C持续200 s作为平稳参数可以达到结果。我们还研究了RTA对 通过二次离子质谱法确定的污染水平。仅发现了RTA的轻微影响 硼，铝和氧的含量

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