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首页> 外文会议>European photovoltaic solar energy conference >INVESTIGATION OF THE ELECTRIC-FIELD PROFILE IN MICROCRYSTALLINE SILICON P-I-N SOLAR CELLS BY CROSS-SECTIONAL SCANNING KELVIN PROBE MICROSCOPY
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INVESTIGATION OF THE ELECTRIC-FIELD PROFILE IN MICROCRYSTALLINE SILICON P-I-N SOLAR CELLS BY CROSS-SECTIONAL SCANNING KELVIN PROBE MICROSCOPY

机译：截面扫描开尔文探针显微镜研究微晶硅P-I-N太阳能电池的电场分布

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Scanning Kelvin probe microscopy (SKPM) is performed on cross-sections of microcrystalline silicon(μc-Si:H) p-i-n solar cells deposited on a surface-textured ZnO layer. Cross-sections are either prepared by a simplefracture procedure or by mechanical polishing. Profiles of the variation in the electric-field induced by different biasvoltage (V_(bias)) applied to the cell are deduced from SKPM potential measurements by calculating the first derivativeof the modification of the surface potential profiles. The amplitude of the V_(bias)-induced electric-field is found to beheterogeneously distributed over different μc-Si:H clusters. From these measurements, we suggest that each clusterbehaves as an “isolated nanodiode”, the electric-field changes being mainly confined within ～500 nm in the intrinsicμc-Si:H layer either near the p-i or near the i-n interface. This supports the assumption of an important contributionof diffusion-assisted transport along the growth axis of the large crystalline nanograins observed by transmissionelectron microscopy (TEM) in the μc-Si:H clusters. A comparison of SKPM images with a TEM micrographdemonstrates that cluster boundaries in the intrinsic μc-Si:H layer can be imaged by the SKPM technique.
机译：在微晶硅的横截面上执行扫描开尔文探针显微镜（SKPM） （μc-Si：H）p-i-n太阳能电池沉积在具有表面纹理的ZnO层上。横截面可以通过简单的方法来准备 断裂程序或通过机械抛光。不同偏压引起的电场变化曲线 通过计算一阶导数，从SKPM电位测量值中得出施加到电池上的电压（V_（bias）） 表面电势分布的变化。发现V_（bias）感应电场的振幅为 异质分布在不同的μc-Si：H簇上。根据这些测量结果，我们建议每个集群 表现为“隔离的纳米二极管”，电场变化主要限制在本征中的〜500 nm范围内 p-i或i-n界面附近的μc-Si：H层。这支持了重要贡献的假设 透射观察到的大晶体纳米晶粒沿生长轴的扩散辅助传输 μc-Si：H团簇中的电子显微镜（TEM）。 SKPM图像与TEM显微照片的比较 证明可以通过SKPM技术对本征μc-Si：H层中的簇边界进行成像。

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