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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >Systematic study of a-Ge:H and μc-Ge:H as bottom cell absorber material for silicon based high efficiency multi junction thin film solar cells
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Systematic study of a-Ge:H and μc-Ge:H as bottom cell absorber material for silicon based high efficiency multi junction thin film solar cells

机译：a-Ge：H和μc-Ge：H作为硅基高效多结薄膜太阳能电池底部电池吸收材料的系统研究

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In this contribution the growth conditions of microcrystalline and amorphous hydrogenated thin germanium layers on glass substrates and their potential as a bottom structure in silicon based multi junction solar cells is investigated. The absorption spectra of the thin germanium layers are several orders of magnitude higher than that of microcrystalline and amorphous silicon. Thus, the film thickness for the absorber layer can be significantly reduced compared to silicon thin films. By varying the deposition parameters like germane flow and total gas flow a transition from amorphous to microcrystalline germanium growth regime can be detected. The phase change can also be observed in dark conductivity measurements. Additionally to the growth experiments, first pin-solar cells are presented using also the n- and p-type germanium as the contact layers. Finally, the potential for thin germanium films used as bottom structures in tandem or triple junction solar cells is described.
机译：为此，研究了玻璃基板上微晶和非晶态氢化锗薄膜的生长条件及其在硅基多结太阳能电池中作为底部结构的潜力。锗薄层的吸收光谱比微晶和非晶硅的吸收光谱高几个数量级。因此，与硅薄膜相比，可以显着减小用于吸收体层的膜厚度。通过改变沉积参数，如锗烷流量和总气体流量，可以检测出从非晶态到微晶态锗的生长方式。在暗电导率测量中也可以观察到相变。除生长实验外，还提出了第一种针状太阳能电池，其中也使用了n型和p型锗作为接触层。最后，描述了在串联或三结太阳能电池中用作底部结构的锗薄膜的潜力。

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