• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >III-V MULTI-JUNCTION SOLAR CELLS UTILISING GROUP IV SIGESN ALLOYS AS A 1.0 EV COMPONENT SUB-CELL
【24h】

III-V MULTI-JUNCTION SOLAR CELLS UTILISING GROUP IV SIGESN ALLOYS AS A 1.0 EV COMPONENT SUB-CELL

机译：III-V多结太阳能电池利用IV族Sigesn合金作为1.0eV组分亚细胞

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Four-junction solar cells can theoretically achieve over 50% efficiency under 1 sun. Optimally efficient four-junction (4J) solar cells require a sub-cell with a bandgap close to 1 eV. Current high-efficiency 4J devices use lattice-mismatched sub-cells to achieve an optimal combination of bandgaps, complicating the fabrication process; thus, novel materials which can achieve a 1 eV bandgap while remaining lattice-matched to Ge are required. Group IV alloy SiGeSn is a promising material system, with functional devices having already been demonstrated. However, further investigation of the fundamental properties of relevant SiGeSn compositions is key to fabricating an efficient 4J device. We present optical measurements (spectroscopic ellipsometry and steady-state photoluminescence) and device characterization of single and triple-junction devices containing SiGeSn sub-cells. Results indicate the desired blueshift of the lowest indirect and direct energy transitions in SiGeSn relative to Ge with the addition of Si and Sn in a composition ratio around 4 to 1. Device measurements indicate good EQE performance in both devices, while the open-circuit voltage is lower than expected based on absorption around 1 eV, indicating the lower indirect edge in SiGeSn limits the voltage.
机译：在理论上可以在1℃下理论上达到超过50％的效率。最佳有效的四联（4J）太阳能电池需要具有接近1eV的带隙的子单元。目前的高效4J器件使用晶格失配的子单元来实现带隙的最佳组合，使制造过程复杂化;因此，可以在剩余晶格与GE剩余晶格匹配的同时实现1eV带隙的新型材料。第四组合金Sigesn是有希望的材料系统，具有已经证明的功能装置。然而，进一步调查相关XIGESN组合物的基本性质是制造有效4J器件的关键。我们呈现光学测量（光谱椭圆形和稳态光致发光）和包含XIGESN子单元的单结装置的装置表征。结果表明，通过在4至1左右的组成比中添加Si和Sn的Si和Sn的Ligesn中最低间接和直接能量过渡的所需蓝线。设备测量表明两个设备中的良好EQE性能，而开路电压基于1eV的吸收低于预期，表示Sigesn中的下间接边缘限制电压。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号