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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >Nanocrystalline vs. amorphous n-type silicon front surface field layers in silicon heterojunction solar cells: Role of thickness and oxygen content
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Nanocrystalline vs. amorphous n-type silicon front surface field layers in silicon heterojunction solar cells: Role of thickness and oxygen content

机译：硅杂交连通太阳能电池中的纳米晶体与非晶N型硅前表面场层：厚度和氧含量的作用

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摘要

We report on a systematical investigation of the influence of layer thickness and oxygen content of different silicon-based n-doped layers deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on silicon heterojunction (SHJ) solar cell performance. N-type amorphous (a-), nanocrystalline (nc-) hydrogenated silicon (Si:H) and silicon oxide (SiO_x:H) films were used as front surface field (FSF) layers on rear emitter (RE) SHJ solar cells. The benefit, both in electrical and optical properties, of using nc-silicon layers, is demonstrated. The best cell in the oxygen variation experiment was obtained with an (n)nc-SiO_x:H FSF having a refractive index n of 2.72 at 633 nm, which leads to an increase in short circuit current density, j_(sc), of more than 1 mA/cm~2 as compared to a reference cell with an a-Si:H FSF. This higher j_(sc) obtained in our best nc-SiO_x:H prototypes leads to a conversion efficiency, η, of 21.4%. It is also remarkable our best cell result, certified by ISFH CalTeC, with an improved nc-Si:H FSF that enabled an improved j_(sc) of 38.6 mA/cm~2 and an η of 22.5%.
机译：我们报告了等离子体增强化学气相沉积（PECVD）沉积的不同硅基N掺杂层的层厚度和氧含量对硅杂函数（SHJ）太阳能电池性能的影响。 N型无定形（A-），纳米晶（NC-）氢化硅（Si：H）和氧化硅（SiO_x：H）膜在后发射极（RE）SHJ太阳能电池上的前表面场（FSF）层。证明了使用NC-Silicon层的电气和光学性质的益处。用（n）NC-SiO_x：H FSF在633nm处具有2.72的折射率N的氧变异实验中的最佳细胞，其导致短路电流密度的增加，J_（SC）更多与具有A-Si：H FSF的参考单元相比，比1mA / cm〜2。在我们最好的NC-SIO_X：H原型中获得的较高J_（SC）导致转换效率，η，21.4％。通过ISFH Caltec认证的最佳单元格结果也是显着的，通过改进的NC-Si：H FSF，使得能够改进的J_（SC）为38.6 mA / cm〜2和η的22.5％。

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