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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >COMPARISON OF INFLUENCE ON MC-SI SOLAR CELL PERFORMANCE OF DISLOCATION CLUSTERS AND GRAIN BOUNDARIES BY USING PHOTOLUMINESCENCE IMAGING
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COMPARISON OF INFLUENCE ON MC-SI SOLAR CELL PERFORMANCE OF DISLOCATION CLUSTERS AND GRAIN BOUNDARIES BY USING PHOTOLUMINESCENCE IMAGING

机译：用光致发光成像对脱位簇和晶界晶界的影响对MC-Si太阳能电池性能的影响

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Inline photoluminescence (PL) imaging has been applied to identify impurity-decorated dislocation clusters and grain boundaries in as-cut wafers. The ratio of impuritiy-decorated dislocation clusters area and grain boundaries area to the total area in wafer can be calculated separately by software. Ten wafers are selected from bottom and top region of a central block with a defect area ratio of 7.5% to fabricate solar cells respectively. The result shows that for the samples with main grain boundaries defect, there is a 0.11% absolute efficiency higher than that of samples with dislocation clusters defect. It can be concluded that grain boundaries contribute a relatively less negative effect on the performance of solar cells after the gettering process. Meanwhile, impurities prefer to interact with dislocation clusters in top area of ingot.
机译：载体光致发光（PL）成像已被应用于识别杂质装饰的位错簇和切割晶片中的晶界。通过软件可以单独计算不足装饰的位错簇区域和晶界区域到晶片总面积的比率。 10个晶片选自中央块的底部和顶部区域，缺陷面积比为7.5％，分别制造太阳能电池。结果表明，对于具有主晶界缺陷的样品，绝对效率高于具有脱位簇缺陷的样本的绝对效率0.11％。可以得出结论，谷物边界对吸血过程后对太阳能电池的性能产生相对较少的负面影响。同时，杂质宁愿与铸锭顶部区域中的位错簇相互作用。

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