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Optimization of a single crystalline-like germanium thin film growth on inexpensive flexible substrates and fabrication of germanium bottom junction

机译：在廉价的柔性基板上优化单晶状锗薄膜的生长以及锗底结的制造

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摘要

III-V semiconductor multijunction solar cells utilizing a germanium (Ge) bottom junction show high efficiency, however, are limited to the expensive Ge single-crystal wafers. Our approach focuses on thin film-based multijunction photovoltaics to replace Ge wafers by depositing single-crystalline-like Ge thin film on flexible and inexpensive metal tapes. The deposition temperature and film thickness were optimized to achieve optimal surface roughness, carrier mobility and carrier concentration. It has been found that 850 °C is an optimum deposition temperature to achieve the sharpest texture, the highest carrier mobility and film smoothness. The surface roughness decreases while hall mobility increases with increasing Ge layer thickness up to 1.25 μm. Finally, a p-Ge/n-Ge bottom junction was fabricated based on the optimized Ge thin film.
机译：利用锗（Ge）底部结的III-V半导体多结太阳能电池显示出高效率，然而，限于昂贵的Ge单晶晶片。我们的方法专注于通过在柔性且廉价的金属带上沉积类单晶Ge薄膜来替代Ge晶片的基于薄膜的多结光伏电池。优化沉积温度和膜厚度以实现最佳的表面粗糙度，载流子迁移率和载流子浓度。已经发现850℃是实现最清晰的质地，最高的载流子迁移率和膜光滑度的最佳沉积温度。随着Ge层厚度增加到1.25μm，表面粗糙度减小，而霍尔迁移率增加。最后，基于优化的锗薄膜制备了p-Ge / n-Ge底部结。

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