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A low-power high-linearity symmetrical readout circuit for capacitive sensors

机译:用于电容传感器的低功耗高线性对称读出电路

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This paper presents a symmetrical readout circuit for capacitive sensors. Based on charge transfer principle, it is insensitive to stray capacitors. Introducing a reference branch, this symmetrical readout circuit can enlarge its linear range, reduce amplifier offsets and reject common-mode noise and even-order distortions. Chopper stabilization technique is used to reduce the negative effects of the amplifier offset and flicker (1/f) noise. A Verilog-A based varactor is used to model the real variable sensing capacitor. Simulation results are given for sensing capacitor changing frequency at 1 KHz. Metal-Insulator-Metal (MIM) capacitor array is designed on chip for measurement. Measurement results show that this circuit can achieve sensitivity of 370 mV/pF, linearity error below 1 % and power consumption as low as 2.5 mW. This symmetrical readout circuit can respond to FPGA controlled sensing capacitor array changed every 1 ms.
机译:本文提出了一种用于电容传感器的对称读出电路。基于电荷转移原理,它对杂散电容器不敏感。引入参考分支,该对称读出电路可以放大其线性范围,减少放大器偏移并抑制共模噪声和偶数畸变。斩波稳定技术用于减少放大器偏移和闪烁(1 / F)噪声的负面影响。基于Verilog-A基于Varactor用于模拟真实可变传感电容器。给出仿真结果,用于在1 kHz处传感电容器变化频率。金属绝缘体 - 金属(MIM)电容器阵列设计在芯片上进行测量。测量结果表明,该电路可以实现370 mV / PF,线性误差低于1%的线性误差,功耗低至2.5 mW。该对称读出电路可以响应FPGA控制的感测电容器阵列每1毫秒改变。

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