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首页> 外文会议>IEEE International Nanoelectronics Conference >Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates
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Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates

机译：高度外延CaCu3Ti4O12薄膜在邻近基板上调节菌株和物理性质

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摘要

Epitaxial thin films of perovskite-like structural CaCu3Ti4O12 (CCTO) were grown on vicinal (001) single-crystal LaAlCb (LAO) substrates to investigate the evolution of micro structure and dielectric properties of the films with the mismatch strain induced by surface step terrace. The different surface terrace width of the substrates produced by various miscut angles of 1.0°, 2.5°, and 5.0° along [110] direction successfully tuned the lattice structure, which were confirmed by X-ray diffraction. A model is proposed that the substrate step terrace dimensions on each vicinal LAO substrate can be tuned by miscutting angles, which introduces compressive and tensile strained domains of the CCTO film and further affect the dielectric properties. Based on this growth mode, we can achieve high dielectric constant and reduce the dielectric loss by a proper design of the miscutting angles.
机译：在Vicinal（001）单晶LaALCB（LAO）基板上生长钙钛矿状结构CaCu3Ti4O12（CCTO）的外延薄膜，以研究通过表面阶梯露台诱导的膜的微结构和介电性能的演变。由沿[110]方向的各种晶片角度为1.0°，2.5°和5.0°产生的衬底的不同表面露天宽度成功调整了通过X射线衍射确认的晶格结构。提出了一种模型，即通过误导角度可以调节每个远程老挝基板上的基板步进露天尺寸，这引入了CCTO膜的压缩和拉伸应变域并进一步影响介电性质。基于该增长模式，我们可以通过适当的误导性角度来实现高介电常数并降低介电损耗。

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