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首页> 外文会议>IEEE International Nanoelectronics Conference >Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates
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Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates

机译：调整邻近衬底上高外延CaCu3Ti4O12薄膜的应变和物理特性

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摘要

Epitaxial thin films of perovskite-like structural CaCu3Ti4O12 (CCTO) were grown on vicinal (001) single-crystal LaAlCb (LAO) substrates to investigate the evolution of micro structure and dielectric properties of the films with the mismatch strain induced by surface step terrace. The different surface terrace width of the substrates produced by various miscut angles of 1.0°, 2.5°, and 5.0° along [110] direction successfully tuned the lattice structure, which were confirmed by X-ray diffraction. A model is proposed that the substrate step terrace dimensions on each vicinal LAO substrate can be tuned by miscutting angles, which introduces compressive and tensile strained domains of the CCTO film and further affect the dielectric properties. Based on this growth mode, we can achieve high dielectric constant and reduce the dielectric loss by a proper design of the miscutting angles.
机译：在邻近（001）单晶LaAlCb（LAO）衬底上生长钙钛矿状结构CaCu3Ti4O12（CCTO）的外延薄膜，以研究表面台阶台阶引起的失配应变的薄膜的微观结构和介电性能的演变。沿[110]方向由1.0°，2.5°和5.0°的各种误切角产生的基板的不同表面平台宽度成功调整了晶格结构，这已通过X射线衍射得到了证实。提出了一个模型，可以通过错切角度来调整每个相邻LAO衬底上的衬底台阶平台尺寸，这会引入CCTO膜的压缩和拉伸应变域，并进一步影响介电性能。基于这种增长模式，我们可以通过适当设计误切角来实现高介电常数并减少介电损耗。

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