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Improvement of ZEP process for advanced mask fabrication

机译：提高淋浴工艺的高级面膜制造

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In mask making, ZEP7000 resist process with MEBES writing tool is widely adopted to produce advanced masks. This time, we tried to improve resist pattern CD uniformity in ZEP process using our special techniques. Resist sensitivity uniformity of mask blank is one of the most significant parameters for resist pattern CD uniformity. In ZEP7000 coating process (coating, pre-baking and cooling), our original cooling method was adopted in consideration of its resist sensitivity properties. Resist film thickness loss (RTL) uniformity during development was examined in order to analyze the resist sensitivity uniformity within a mask blank. It was clearly seen that resist pattern CD uniformity was related with RTL uniformity. As for our original cooling method, an optimum cooling condition was easily obtained because it had only two parameters. As the results, RTL uniformity was 2.4nm (range), moreover, resist pattern CD uniformity was 15nm (range) with the optimum cooling condition. RTL uniformity and resist pattern CD uniformity were also examined using blanks which were commercially available from two vendors. And these results were compared with the results of our original cooling method. Based on the results of our study, we confirmed that our original cooling method was very effective for improvement of resist pattern CD uniformity on ZEP process.
机译：在掩模制作中，Zep7000抗蚀剂使用MEBES写作工具被广泛采用了生产先进的面具。这次，我们尝试使用我们的特殊技术提高血液过程中的抗蚀模式CD均匀性。掩模空白的抗蚀剂敏感性均匀性是抗蚀剂图案CD均匀性最重要的参数之一。在Zep7000涂布过程（涂布，预烘焙和冷却）中，我们的原始冷却方法考虑了其抗蚀剂敏感性。检查了开发过程中的抗蚀膜厚度损失（RTL）均匀性，以分析掩模空白内的抗蚀剂敏感性均匀性。清楚地看出，抗蚀剂图案CD均匀性与RTL均匀性有关。至于我们原始的冷却方法，容易获得最佳的冷却条件，因为它只有两个参数。结果，RTL均匀性为2.4nm（范围），此外，抗蚀剂图案CD均匀性为15nm（范围），最佳冷却条件。还使用从两种供应商商购获得的坯料检查RTL均匀性和抗蚀剂图案CD均匀性。这些结果与我们原始冷却方法的结果进行了比较。根据我们研究的结果，我们证实我们的原始冷却方法对于改善血液过程中的抗蚀剂图案CD均匀性非常有效。

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