Solution for 100nm - EBM-4000 -

机译：解决方案100nm - EBM-4000 -

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The newly developed electron beam mask lithography system EBM-4000, with improved accuracy, throughput, and larger data volume handling certainly provides the solutions for not only 100nm generation but also 70nm generation optical mask fabrication. EBM-4000 achieves high throughput using triangle shaped beam, high-speed deflection amplifiers, and high current density optics system. The CD uniformity is high accuracy in local and global, which is achieved by noise reduction, foggy effect correction and other improvements. It is able to handle large data volume of those generations LSI data in memory sizes and in data communication speed.

机译：新开发的电子束掩模光刻系统EBM-4000，具有改善的精度，吞吐量和更大的数据量处理肯定提供了不仅为100nm代的解决方案，而且提供了70nm代光掩模制造。 EBM-4000使用三角形光束，高速偏转放大器和高电流密度光学系统实现高吞吐量。 CD均匀性在本地和全球的高精度，通过降噪，有雾效应校正和其他改进来实现。它能够在存储器大小和数据通信速度下处理这些几代LSI数据的大数据量。

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《Conference on photomask and next-generation lithography mask technology》|2002年||共8页
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Yoshiaki Hattori; Kiyoshi Hattori; Ken-ichi Murooka; Takayuki Abe; Satoshi Yasuda; Taiga Uno; Eiji Murakamai; Noriaki Nakayamada; Naoharu Shimomura; Ttsuyoshi Yamashita; Noboru Yamada; Akihiro Sakai; Hirohiko Honda; Toshiaki Shimoyama; Kiyoshi Nakaso;
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中图分类光刻、掩膜;
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1. Solutions for the 100nm node with ultrathin silicon nitride gates [J] . Sagy Levy, Robin Bloom, James Lam, Solid state technology . 2001,第Apr期

机译：具有超薄氮化硅栅极的100nm节点解决方案
2. Initial results of a 50 kV electron beam writer EBM-4000 for a 90 nm node photomask [J] . Ken-ichi Murooka, Kiyoshi Hattori, Osamu lizuka Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structure . 2003,第6期

机译：50 kV电子束写入器EBM-4000用于90 nm节点光掩模的初步结果
3. 1枚の楕円面ミラーによる硬X線2次元100nm集光 [J] . 湯本博勝放射光 . 2019,第1期

机译：一块椭圆镜聚焦100纳米硬X射线2D
4. Solution for 100nm - EBM-4000 - [C] . Yoshiaki Hattori, Kiyoshi Hattori, Ken-ichi Murooka, Conference on Photomask and Next-Generation Lithography Mask Technology IX, Apr 23-25, 2002, Yokohama, Japan . 2002

机译：100nm解决方案-EBM-4000-
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Solution for 100nm - EBM-4000 -

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