• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >THIN TRIPLE JUNCTION CELLS WITH NEW ABSORBER LAYER FOR ENHANCED CURRENT GENERATION
【24h】

THIN TRIPLE JUNCTION CELLS WITH NEW ABSORBER LAYER FOR ENHANCED CURRENT GENERATION

机译：具有新的吸收层的薄型三结电池，可增强电流产生

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

On the way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/ μc-Si:H/μc-SiGe:H configuration cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on 30 × 30 cm~2 PECVD tool. In order to improve the μc-SiGe:H absorbers single junction cells were processed carefully monitoring germanium content and crystallinity while varying pressure and germane flow. Homogeneity test on 30 cm × 30 cm deposition area were performed resulting in a good homogeneity for the thickness. Triple junction cells were fabricated by depositing μc-Si:H and μc-SiGe:H absorbers on state of the art tandem structures managed to reach 12.2 % efficiency. Our intention is to develop an industrial relevant process with attractive fabrication times by benefiting from the enhanced absorption of μc-SiGe:H compared to μc-Si:H.
机译：在开发a-Si：H /μc-Si：H /μc-SiGe：H构型的超薄和高效三结薄膜太阳能电池的过程中，制备了电池样品，并使用了与工业相关的13.56 MHz进行了表征在30×30 cm〜2 PECVD工具上以0.5 nm / s的速度进行处理。为了改善μc-SiGe：H吸收剂，在改变压力和锗烷流量的同时，仔细监控锗含量和结晶度，对单结电池进行了精心处理。在30 cm×30 cm的沉积区域进行均质性测试，结果厚度具有良好的均质性。通过将μc-Si：H和μc-SiGe：H吸收剂沉积在最先进的串联结构上（效率达到12.2％）来制造三结电池。我们的目的是通过受益于与μc-Si：H相比增强的μc-SiGe：H吸收来开发具有有吸引力的制造时间的工业相关工艺。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号