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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Investigation of doped a-Si1−xCx:H as a novel back contact material for CdTe solar cells
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Investigation of doped a-Si1−xCx:H as a novel back contact material for CdTe solar cells

机译：掺杂a-Si 1-x C x ：H作为CdTe太阳能电池新型背接触材料的研究

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Wide band-gap, p-type doped, hydrogenated amorphous silicon-carbon alloy (a-SiC:H:B) layers deposited by plasma enhanced chemical vapor deposition (PECVD) under conditions that yield efficient hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells have been applied as back contacts to sputter-deposited CdTe superstrate solar cells. We report a maximum observed V of 0.78 V and a best initial efficiency of ∼ 7.7 % (relative to an ∼ 12% standard cell baseline) without the introduction of Cu into the back contact region. We studied the stability of the best performing cells over a two year time period and found that although V is relatively stable, the series resistance of the cells increased significantly leading to fill-factor degradation. The role of hydrogen loss from the back contact layer via diffusion into the CdTe absorber is explored as a possible cause of this degradation. In related investigations, we have found that the effect of in-diffusing H on the CdTe solar cell performance is detrimental, as observed from a brief (∼ 15 s) exposure of CdTe to a low power H plasma between the treatment by CdCl and the application of standard Cu/Au back contacts. This detrimental effect of H in the fabrication of the back contact layer from hydride gases, and the subsequent instability of the back contact itself, were found to be significant challenges encountered in this investigation.
机译：在产生有效氢化非晶硅（a-Si：H）的条件下，通过等离子体增强化学气相沉积（PECVD）沉积的宽带隙p型掺杂氢化非晶硅碳合金（a-SiC：H：B）层）引脚太阳能电池已作为背面触点应用于溅射沉积的CdTe覆层太阳能电池。我们报告的最大观察到的V为0.78 V，最佳初始效率为7.7％（相对于标准电池基线的约12％），而没有将Cu引入背接触区。我们研究了两年内性能最佳的电池的稳定性，发现尽管V相对稳定，但电池的串联电阻显着增加，导致填充因子降解。探究了氢通过扩散到CdTe吸收剂中而从背接触层流失的作用，是造成这种降解的可能原因。在相关研究中，我们发现，在CdCl处理和CdCl处理之间，CdTe短暂（〜15 s）暴露于低功率H等离子体中，观察到H扩散对CdTe太阳能电池性能的影响是有害的。标准Cu / Au背面触点的应用。在由氢化物气体制造背接触层中，H的这种有害作用以及随后的背接触本身的不稳定性被认为是本研究中遇到的重大挑战。

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