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首页> 外文会议>IEEE International Conference on Nano/Micro Engineered and Molecular Systems >Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant
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Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant

机译：弹道肖特基势垒GNRFET和CNTFET的电流-电压特性：相对介电常数的影响

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Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET.
机译：目前，石墨烯纳米带（GNR）和碳纳米管（CNT）被认为是取代硅技术的两个最有希望的选择。硅技术面临着缩放限制和其他物质问题，这些问题阻碍了晶体管技术的发展。本文研究了相对介电常数对弹道肖特基势垒石墨烯纳米带场效应晶体管（GNRFET）和碳纳米管场效应晶体管（CNTFET）性能的影响，并提供了两种晶体管之间的比较分析。已经观察到，使用具有较高的相对介电常数的栅极材料导致两个晶体管的较高的导通状态漏极电流。但是，与GNRFET相比，CNTFET的导通状态漏极电流更高。同样在该文献中，计算并绘制了两个晶体管的导通和截止状态电流比，并作图以进一步区分GNRFET和CNTFET的性能。

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