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An empirical approach to accurate single wafer wet etch simulation

机译:精确地单晶片湿法蚀刻仿真的经验方法

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Optimizing wet etch recipe for meeting a target (e.g. Uniformity) typically involves the tuning of multiple parameters; a process that is time consuming and expensive (in terms of tool time, engineering time and material used). In addition, because the process is ultimately constrained by the handful of nozzle test positions available due to hardware limitations, very often the final settings are suboptimal. Here, we propose a model that aims to remove such inefficiencies by providing the engineer an approach (tool/program) to simulate the operation for a wider range of parameter in a short time before committing any changes. Our experiments show that sufficient accuracy can be achieved through this method.
机译:优化湿法蚀刻配方以达到目标(例如,均匀性)通常涉及多个参数的调整。一个既耗时又昂贵的过程(就工具时间,工程时间和所用材料而言)。另外,由于硬件的限制,由于该过程最终会受到少数可用的喷嘴测试位置的限制,因此最终设置通常不是最理想的。在这里,我们提出了一个旨在消除这种低效率的模型,方法是为工程师提供一种方法(工具/程序),以便在提交任何更改之前在较短的时间内对更宽范围的参数进行仿真。我们的实验表明,通过这种方法可以实现足够的精度。

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