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High aspect ratio etch yield improvement by a novel polymer dump thickness metrology

机译:通过新型聚合物倾卸厚度测量技术提高高深宽比蚀刻产量

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Unexpected yield loss in high-volume DRAM manufacturing occurs very often as an excursion in critical levels such as high aspect ratio container (HARC) etch in capacitor formation in the device. The main failure mode is polymer formation and plasma density change during the chamber preventive maintenance. In this paper we study the effect of polymer formation on HARC profile at various electrostatic chuck (ESC) temperatures and demonstrate a novel and advanced inline metrology - polymer dump thickness measurement - to automatically detect chamber deviation and significantly improve the yield.
机译:高容量DRAM制造中意外的良率损失非常经常发生,因为这种临界水平的偏移(例如器件中电容器形成中的高长宽比容器(HARC)蚀刻)会发生。主要的故障模式是在腔室预防性维护期间聚合物形成和等离子体密度变化。在本文中,我们研究了在各种静电卡盘(ESC)温度下聚合物形成对HARC轮廓的影响,并展示了一种新颖且先进的在线计量技术-聚合物倾卸厚度测量-可自动检测腔室偏差并显着提高产量。

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