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首页> 外文会议>Annual SEMI Advanced Semiconductor Manufacturing Conference >Local wafer temperature non-uniformity correction with laser irradiation
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Local wafer temperature non-uniformity correction with laser irradiation

机译：用激光辐照校正局部晶圆温度不均匀性

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The application of correcting small temperature non-uniformity on Silicon wafers using local irradiation with spatially scanning laser beams was analyzed. The objective of the study was to understand the specifications of such a laser beam to elevate the temperature of a wafer locally by 1 to 5°C. A detailed analytical model has been developed for predicting power level, exposure time, scanning speed, and the beam characteristics. The model has been derived by solving the three dimensional transient heat equation using Green's function approach. Various wafer characteristics, such as the surface reflectivity, material absorption coefficient, and thermal properties have been built into the formulation as parameters, so that several what-if scenarios can be evaluated with ease and accuracy. Existing analytical methods in literature for prediction of laser irradiated substrate temperatures assume infinite thickness of the substrate. In this study, it has been found that this approximation could result in significant errors particularly for the present application of interest, where the wafer thickness is finite and the focus is on relatively small local temperature rise in short exposure durations. Numerical models were also developed to mimic some particular cases using a commercial finite volume method solver. The numerical and analytical results show an excellent agreement. The analytical model allows for a more diverse range of variables than the finite volume numerical models.
机译：分析了使用与空间扫描激光束的局部照射的校正硅晶片上的小温度不均匀性的应用。该研究的目的是了解这种激光束的规格，以将晶片的温度局部局部提升1至5℃。已经开发了一种详细的分析模型，用于预测功率水平，曝光时间，扫描速度和光束特性。通过使用绿色功能方法解决三维瞬态热方程来源的模型。作为参数的配方中建立了各种晶片特性，例如表面反射率，材料吸收系数和热性质，从而可以轻松和准确地评估一些方法。用于预测激光照射基板温度的文献中的现有分析方法假设基材的无限厚度。在本研究中，已经发现，该近似可能导致特别是对于本申请感兴趣的应用，其中晶片厚度是有限的，并且焦点是在短曝光持续时间内的相对较小的局部温度上升。还开发了数值模型以使用商业有限体积法求解器模拟一些特定情况。数值和分析结果表明了一个很好的一致性。分析模型允许比有限卷数模型更多样化的变量。

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