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Through silicon via process characterization by integrated inspection/metrology solutions in visible and infrared domain

机译:通过可见光和红外领域的集成检测/计量学解决方案,通过硅通孔工艺表征

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In this paper, we present an integrated in-line solution, combining automatic visual inspection/classification with unique 2D/3D measurement technologies, which was used to characterize the defectivity and the morphology of open through silicon via (TSV) structures. The measurements were performed on 300mm Si wafers hosting several populations of via with diameter varied from 5 to 20 micron, and target aspect ratio from 1:8 to 1:20. Interferometry techniques coupled with high resolution cameras working in white light and infrared domains were used to demonstrate TSV process control in R&D and high volume manufacturing environments.
机译:在本文中,我们提出了一种集成的在线解决方案,将自动视觉检查/分类与独特的2D / 3D测量技术相结合,用于表征开口硅通孔(TSV)结构的缺陷性和形态。测量是在300mm Si晶圆上进行的,该晶圆上装有多个通孔,直径从5到20微米不等,目标纵横比从1:8到1:20。干涉测量技术与在白光和红外域中工作的高分辨率相机相结合,被用于演示R&D和大批量制造环境中的TSV工艺控制。

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