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Experimental Study of Intense Radiation around Si-Based Heat-Resistant Materials in Air Plasma Freejets

机译:空气等离子体自由进胶中Si基耐热材料强度辐射的实验研究

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Physico-chemical phenomena of intense radiations around Si-based heat-resistant materials in air plasma freejets were investigated experimentally. Main conclusions were as follows. (1) During SiC ablation, the intense radiation around the materials and the pale greenish radiation in the rear of it were observed. (2) Strong C_2 molecular bands appeared around 470 and 520 nm at x = 8.5 mm and y = 1.5 mm. It was suggested that this molecular band was the cause of pale greenish radiation and that C_2 molecules were formed through recombination reaction of two C's originated from SiC ablation.
机译:实验研究了在空气等离子体自由进食中围绕Si基耐热材料辐射的强烈辐射的物理化学现象。主要结论如下。 (1)在SiC消融期间,观察到材料中的浓度和浅绿色辐射。 (2)强的C_2分子带在x = 8.5mm和y = 1.5mm处出现在470和520nm左右。有人建议,该分子带是浅绿色辐射的原因,通过从SiC消融的两种C的重组反应形成C_2分子。

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