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Experimental Study of Intense Radiation around Si-Based Heat-Resistant Materials in Air Plasma Freejets

机译:等离子自由射流中硅基耐热材料周围强辐射的实验研究

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Physico-chemical phenomena of intense radiations around Si-based heat-resistant materials in air plasma freejets were investigated experimentally. Main conclusions were as follows. (1) During SiC ablation, the intense radiation around the materials and the pale greenish radiation in the rear of it were observed. (2) Strong C_2 molecular bands appeared around 470 and 520 nm at x = 8.5 mm and y = 1.5 mm. It was suggested that this molecular band was the cause of pale greenish radiation and that C_2 molecules were formed through recombination reaction of two C's originated from SiC ablation.
机译:实验研究了空气等离子体自由射流中硅基耐热材料周围强辐射的物理化学现象。主要结论如下。 (1)在SiC烧蚀过程中,观察到了材料周围的强烈辐射和材料背面的浅绿色辐射。 (2)在x = 8.5 mm和y = 1.5 mm时,在470和520 nm附近出现了强C_2分子带。提示该分子带是发出浅绿色辐射的原因,并且通过碳化硅烧蚀产生的两个碳原子的重组反应形成了C_2分子。

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