Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding

机译：晶片键合工具，包括在对准结合之前的原位溅射蚀刻的双等离子体能力

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Surface passivation free direct bonding is emerging as an important wafer bonding technique. We present an innovative approach to removing passivation layers and bonding in a single tool via simultaneous dual plasma treatment.

机译：表面钝化自由直接键合出现为重要的晶圆键合技术。我们提出了一种通过同时双重等离子体处理去除钝化层并在单个工具中粘合的创新方法。

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《International Workshop on Low Temperature Bonding for 3D Integration》|2017年|1 v.|共1页
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Tony Rogers; Vytas Masteika; Rob Santilli;
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正文语种
中图分类半导体技术;
关键词
Bonding; Plasmas; Tools; Wafer bonding; Passivation; Films;

机译：粘合;等离子体;工具;晶圆粘合;钝化;电影;

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专利

1. In-situ detection method for wafer movement and micro-arc discharge around a wafer in plasma etching process using electrostatic chuck wafer stage with built-in acoustic emission sensor [J] . Yuji Kasashima, Tatsuo Tabaru, Mitsuo Yasaka, Japanese journal of applied physics . 2014,第3S2期

机译：使用具有内置声发射传感器的静电吸盘晶圆载物台在等离子蚀刻过程中用于晶圆移动和晶圆周围微弧放电的原位检测方法
2. Modification of Si(100)-surfaces by SF6 plasma etching - Application to wafer direct bonding [J] . Reiche M., Wiegand M., Gosele U. Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 2000,第6a7期

机译：SF6等离子蚀刻对Si（100）表面的改性-在晶片直接键合中的应用
3. Room-temperature wafer bonding of SiC-Si by modified surface activated bonding with sputtered Si nanolayer [J] . Mu Fengwen, Iguchi Kenichi, Nakazawa Haruo, Japanese journal of applied physics . 2016,第4s期

机译：通过溅射Si纳米层的改性表面活化键合实现SiC-Si的室温晶片键合
4. Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding [C] . Tony Rogers, Vytas Masteika, Rob Santilli International Workshop on Low Temperature Bonding for 3D Integration . 2017

机译：晶片键合工具，包括在对准结合之前的原位溅射蚀刻的双等离子体能力
5. Science and technology of plasma activated direct wafer bonding. [D] . Roberds, Brian Edward. 1998

机译：等离子体活化的直接晶圆键合技术。
6. Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding [O] . Michitaka Yamamoto, Takashi Matsumae, Yuichi Kurashima, 2020

机译：金膜厚度和表面粗糙度对室温晶圆键合和金-金表面活化键合的晶圆级真空密封的影响
7. A process technology for realizing integrated inertial sensors using deep reactive ion etching (DRIE) and aligned wafer bonding [O] . Yung Chi-Fan 1973- 1999

机译：一种利用深反应离子刻蚀（DRIE）和对准晶圆键合实现集成惯性传感器的工艺技术

Wafer bonding tool including dual plasma capability for in-situ sputter etching prior to aligned bonding

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