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首页> 外文会议>International Workshop on Active-Matrix Flatpanel Displays and Devices >Low Temperature High-k Solution Processed Hybrid Gate Insulator for High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors
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Low Temperature High-k Solution Processed Hybrid Gate Insulator for High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors

机译：高性能非晶In-Ga-Zn-O薄膜晶体管的低温高k解决方案混合栅极绝缘子

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摘要

Low temperature process is required to fabricate high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) on plastic substrates for flexible display applications. In addition, high-k material which allows higher mobility, higher drain current and lower threshold voltage while facilitating miniaturization, is poised to replace conventional SiO2 gate insulators in TFTs. Therefore, hybrid material containing high-k BaTiO3 nanoparticles and transparent Poly-siloxane (Poly-SX) were used as gate insulator in a-IGZO TFTs. Opting for a hybrid material instead of only a BaTiO3 film enables lowering of process temperatures. This paper presents the performance of a-IGZO TFTs with solution processed hybrid gate insulators at different BaTiO3/Poly-SX ratios deposited at a lower temperature (300°C). The device shows a high mobility of 30.17 cm2/Vs, low threshold voltage of 0.4 V, and leakage current density of ~10−8 A/cm2.
机译：需要低温工艺才能在塑料基板上制造用于柔性显示应用的高性能非晶In-Ga-Zn-O（a-IGZO）薄膜晶体管（TFT）。此外，高介电常数材料可取代传统的SiO，可实现更高的迁移率，更高的漏极电流和更低的阈值电压，同时又有助于实现小型化 2 TFT中的栅极绝缘体。因此，包含高k BaTiO的杂化材料 3 纳米颗粒和透明聚硅氧烷（Poly-SX）用作a-IGZO TFT的栅极绝缘体。选择混合材料而不是仅使用BaTiO 3 薄膜可以降低工艺温度。本文介绍了在不同的BaTiO下采用溶液处理的混合栅绝缘体的a-IGZO TFT的性能 3 / Poly-SX比在较低温度（300°C）下沉积。该设备显示出30.17厘米的高迁移率 2 /Vs、0.4 V的低阈值电压和〜10的泄漏电流密度 -8 A /厘米 2 。

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