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首页> 外文期刊>Progress in Artificial Intelligence >High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator
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High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

机译:具有低温高k溶液加工混合栅极绝缘体的高性能无定形In-Ga-Zn-O薄膜晶体管

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摘要

For flexible display applications, high performance amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low temperature process are required. Moreover, high dielectric constant (high-k) material which enables higher mobility and lower threshold voltage while minimizing the device size are excellent candidates to replace SiO2 gate insulators in conventional oxide semiconductor TFTs. Therefore, nanocomposite material containing high-k BaTiO3 nanoparticles and transparent poly-siloxane (PSX) hybrid polymer were deposited as gate insulator in a-IGZO TFTs to facilitate the reduction of process temperature due to the high temperature requirement (>650 oC) of BaTiO3. This paper presents the performance and analysis of a-IGZO TFTs with high-hybrid gate insulators at different ratios of BaTiO3/PSX deposited by solution process at a lower temperature (300 oC). The TFT shows a high mobility of 35.59 cm(2) V-1 s(-1), low threshold voltage of 0.4 V, and gate leakage current of similar to 10(-10) A. (C) 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
机译:对于灵活的显示应用,需要通过低温工艺制造的高性能无定形In-Zn-O(A-IGZO)薄膜晶体管(TFT)。此外,高介电常数(高k)材料,其实现更高的迁移率和更低的阈值电压,同时最小化器件尺寸是优异的候选者,用于替换在常规氧化物半导体TFT中的SiO2栅极绝缘体。因此,含有高k BaTiO3纳米颗粒和透明聚硅氧烷(PSX)杂化聚合物的纳米复合材料沉积为A-IGZO TFT的栅极绝缘体,以便于由于BATIO3的高温要求(> 650℃)而降低工艺温度。本文介绍了在较低温度(300℃)的溶液过程中沉积的BATIO3 / PSX不同比例的高杂交栅极绝缘子A-IGZO TFT的性能和分析。 TFT显示35.59cm(2)V-1 S(-1),低阈值电压为0.4V的高迁移率,以及类似于10(10)A的栅极漏电流。(c)电化学社会( “ECS”)。由IOP Publishing Limited代表ECS发布。

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