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首页> 外文会议>International Conference on Inventive Systems and Control >Detection of Stability Faults in Sub-threshold SRAM cell Using IDDT Waveform
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Detection of Stability Faults in Sub-threshold SRAM cell Using IDDT Waveform

机译：使用IDDT波形检测子阈值SRAM单元中的稳定性故障

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Sub-threshold memories have become popular in low power applications where energy saving is essential. In recent years a significant amount of work has been done on designing Subthreshold memories those can successfully work at low voltages. However, test methods to unveil physical defects in those new memory designs have not been fully developed. Existing voltage based test methods fail to cover stability faults and most of the weak opens. Moreover, there is no single test method which can unveil all defects in the memory cell. In order to supplement conventional test methods a transient current based test method (IDDT) is used in the present work. In this work, Sub-threshold SRAM cells have been classified based on whether they use common path for read/write operation and type of sense amplifier used These two factors are considered because these two f actors can categorise the cells into categories that results in identical faulty behaviour. We discuss the impact of open defects on various Sub-threshold cells and effectiveness of both voltages based and current based test methods have been tested Simulations are carried out in 45nm process technology.
机译：子阈值存储器在低功耗应用中变得流行，其中节能至关重要。近年来，在设计亚阈值回忆时已经完成了大量工作，这些记忆可以成功地在低电压下工作。然而，在那些新的记忆设计中揭开物理缺陷的测试方法尚未完全开发出来。现有的基于电压的测试方法无法覆盖稳定性故障，并且大部分弱打开。此外，没有单一的测试方法可以在存储器单元中揭示所有缺陷。为了补充常规的测试方法，在本工作中使用基于瞬态电流的测试方法（IDDT）。在这项工作中，基于它们是否使用读/写操作的公共路径以及使用这两个因素的读取放大器类型的常用路径进行分类，因为这两个f actors可以将小区分类为导致相同的类别有缺陷的行为。我们讨论了开放缺陷对各种子阈值细胞的影响，并且已经测试了基于电压和基于电流的测试方法的有效性，在45nm工艺技术中进行了模拟。

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