Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs

机译：管芯到数据库的缺陷检测，用于64和256 Mbit DRAM的标线

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Abstract: The development and production of 64 and 256 Mbit DRAMs presents new challenges to mask defect detection. As happened during the development of previous generations of DRAMs, the decrease in line/space design rule dictates a similar decrease in the specification of mask defect size. This trend introduces new technologies and new requirements. This paper is concerned with two evolving technologies: layout modification for optical proximity correction (OPC) and phase-shift masks (PSM). The new technologies pose many issues for the mask maker. In this paper the defect detection is addressed. In section 2 few cases of OPC reticle inspection are presented while in section 3 the defect detection of PSM is discussed.!2

机译：摘要：64和256 Mbit DRAM的开发和生产对掩盖缺陷检测提出了新的挑战。正如在前几代DRAM的开发过程中所发生的那样，线/空间设计规则的减少表明掩模缺陷尺寸的规格也有类似的减少。这种趋势引入了新技术和新要求。本文涉及两种正在发展的技术：用于光学邻近校正（OPC）和相移掩模（PSM）的布局修改。新技术给面膜制造商带来了许多问题。在本文中，解决了缺陷检测。在第2节中，介绍了一些OPC掩模版检查的案例，而在第3节中，讨论了PSM的缺陷检测。！2

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《Photomask and X-Ray Mask Technology II》|1995年|p.453-456|共4页
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Yair Eran; Orbot Instruments Ltd.; Yavne; Israel; Gadi Greenberg; Orbot Instruments Ltd.; Yavne; Israel; Gideon Rossman; Orbot Instruments; Setagaya-ku; Tokyo; Japan.;
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中图分类无线电电子学、电信技术;
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1. Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs [J] . Tasch A.F. Jr., Parker L.H. Proceedings of the IEEE . 1989,第3期

机译：64和256 Mbit一晶体管单元MOSD DRAM的存储单元和技术问题
2. Process variation effects on circuit performance: TCAD simulation of 256-Mbit technology [DRAMs] [J] . Murthy C.S., Gall M. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 1997,第11期

机译：工艺变化对电路性能的影响：256 Mbit技术[DRAM]的TCAD仿真
3. Thermally robust Ta/sub 2/O/sub 5/ capacitor for the 256-Mbit DRAM [J] . Kee-Won Kwon, Chang-Seok Kang IEEE Transactions on Electron Devices . 1996,第6期

机译：256 Mbit DRAM的耐热Ta / sub 2 / O / sub 5 /电容器
4. Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs [C] . Yair Eran, Gadi Greenberg, Gideon Rossman Conference on Photomask and X-Ray Mask Technology . 1995

机译：用于64-和256 Mbit DRAM的滤芯的模具到数据库缺陷检测
5. Local area mask patterning of extreme ultraviolet lithography reticles for native defect analysis [D] . Lyons, Adam 2013

机译：用于自然缺陷分析的极紫外光刻掩模版的局部掩模图案
6. Rapid detection of cytomegalovirus by fluorescent monoclonal antibody staining and in situ DNA hybridization in a dram vial cell culture system. [O] . A F Sorbello, S L Elmendorf, J J McSharry, 1988

机译：通过荧光单克隆抗体染色和德拉姆瓶细胞培养系统中的原位DNA杂交快速检测巨细胞病毒。
7. Amplitude and phase defect inspection on EUV reticles using RESCAN [O] . Iacopo Mochi, Sara Fernandez, Ricarda Nebling, 2019

机译：使用Rescan对EUV掩模术的幅度和相位缺陷检查
8. EUV Inspection of Reticle Defect Repair Sites [R] . Goldberg, K. 2007

机译：EUV检查光罩缺陷修复站点

Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs

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