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Consideration of chemical bond configurations for radiation-hard UHV ECR-CVD SiNx x-ray mask membrane

机译：考虑抗辐射的特硬UHV ECR-CVD SiNx X射线掩模膜的化学键构型

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Abstract: In this paper, the chemical study on the radiation-hard silicon nitride X-ray mask membrane prepared by an ultrahigh-vacuum electron cyclotron resonance chemical vapor deposition is presented. Silicon nitride film with higher nitrogen content showed a degraded radiation-stability. It is speculated that the higher electronegativity and the stress induced by smaller covalent radius of nearest-neighbor nitrogen atoms weakens the Si-H bonds, which is the most possible source of radiation-induced damage. Increases in silicon content in silicon nitride film is supposed to result in an improvement in the radiation stability through the modification in the bandgap structure and the microscopic bond configurations.!23
机译：摘要：本文对超高真空电子回旋共振化学气相沉积法制备的辐射硬氮化硅X射线掩模膜进行了化学研究。具有较高氮含量的氮化硅膜显示出降低的辐射稳定性。据推测，较高的电负性和由最近邻氮原子的较小共价半径引起的应力会削弱Si-H键，这是最可能的辐射诱发损伤源。氮化硅膜中硅含量的增加被认为可以通过改变带隙结构和微观键结构来提高辐射稳定性。23

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