Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks

机译：具有交替相移掩模的0.1μm以下ArF准分子激光光刻

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Abstract: We delineated 0.088 $mu@m line and space patterns by using an etched-in phase-shifting mask. The etched area of the mask had good morphology and high transmittance for deep UV light. The phase-shifting angle of the etched area was well controlled within 180 $POM 5 degrees.!3

机译：摘要：我们通过使用蚀刻的相移掩模描绘了0.088 $ mu @ m的线和空间图案。掩模的蚀刻区域对于深紫外光具有良好的形态和高透射率。蚀刻区域的相移角被很好地控制在180度5度POM之内!! 3

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《Photomask and X-Ray Mask Technology II》|1995年|p.367-371|共5页
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Jun Ushioda; NEC Corp.; Kawasaki-shi; Kanagawa; Japan; Yuko Seki; NEC Corp.; Miyamae-ku; Kawasaki-shi; Kanagawa; Japan; Hiroyoshi Tanabe; NEC Corp.; Kawasaki-shi; Japan; Yukio Ogura; NEC Corp.; Miyamae-ku; Kawasaki; Japan; Katsumi Maeda; NEC Corp.; Miyamae-ku; Kawasaki; Japan; Takeshi Ohfuji; NEC Corp.; Sagamihara; Kanagawa; Japan.;
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中图分类无线电电子学、电信技术;
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1. Fabry-Perot Type Antireflective Coatings for Binary Mask Applications in ArF and F_2 Excimer Laser Lithographies [J] . H. L. Chen, C. C. Lee, Y. F. Chuang Electrochemical and solid-state letters . 2003,第4期

机译：用于ArF和F_2受激准分子激光光刻中的二元掩模应用的Fabry-Perot型抗反射涂层
2. Simple method to manufacture a self-aligning alternating phase-shifting photo mask for EUV photo lithography using existing photo mask manufacturing capabilities [J] . Research Disclosure . 2019,第658期

机译：使用现有光掩模制造能力制造用于EUV光刻的自对准交替相移光掩模的简单方法
3. Simple method to manufacture a self-aligning alternating phase-shifting photo mask for EUV photo lithography using existing photo mask manufacturing capabilities [J] . Research Disclosure . 2019,第658期

机译：使用现有的照片掩模制造能力制造用于EUV照片光刻的自对准交替相移照片掩模的简单方法
4. Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks [C] . Jun Ushioda, Yuko Seki, Hiroyoshi Tanabe, Conference on Photomask and X-Ray Mask Technology . 1995

机译：SUB 0.1 UM ARF准分子激光光刻，具有交替相移掩模
5. ArF excimer laser corneal ablation: Effects of laser repetition rate and fundamental laser-tissue coupling. [D] . Shanyfelt, Leia Megan. 2008

机译：ArF准分子激光角膜消融：激光重复频率和基本激光-组织耦合的影响。
6. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation [O] . Kunsik An, Ho-Nyun Lee, Kwan Hyun Cho, 2020

机译：193 nm ArF受激准分子激光在激光辅助等离子体增强SiNx的化学气相沉积中的作用以进行低温薄膜封装
7. Alternating phase-shifting mask with reduced aberration sensitivity: lithography considerations [O] . Wong AKK, Liebmann LW, Molless AF 2001

机译：具有降低的像差灵敏度的交替相移掩模：光刻考虑因素
8. Pulsed Laser Deposition of Amorphous Diamond-Like Carbon Films With ArF (193 nm)Excimer Laser [R] . Xiong, F., Wang, Y. Y., Leppert, V., 1992

机译：用arF（193 nm）准分子激光脉冲激光沉积非晶类金刚石薄膜

Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks

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