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X-ray mask fabrication process

机译：X射线掩膜制作工艺

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Abstract: The Center for X-ray Lithography (CXrL) has developed an x-ray mask fabrication process based on silicon nitride membranes and gold absorber. The LPCVD conditions for the growth of the nitride film produce 2 $mu@m thick films with low tensile stress and an optical transmission sufficient for optical alignment. The membranes are formed with an reactive ion etch of the membrane window on the backside nitride, followed by a KOH etch of the silicon wafer. A plating base of 100 angstrom chrome followed by 200 angstrom gold is evaporated on the wafers. The wafer is then mounted on a glass ring using either adhesive or anodic bonding. The absorber pattern is delineated via e-beam lithography into either PMMA or SAL 601. Following resist development and an oxygen plasma cleaning, gold plating is used to produce features of the desired thickness.!11
机译：摘要：X射线光刻技术中心（CXrL）开发了一种基于氮化硅膜和金吸收剂的X射线掩模制造工艺。用于氮化物膜生长的LPCVD条件产生具有低拉伸应力和足以进行光学对准的光透射的2μm厚的膜。通过在背面氮化物上对膜窗口进行反应性离子蚀刻，然后对硅晶片进行KOH蚀刻，来形成膜。在晶片上蒸镀了100埃铬和200埃金的镀层。然后使用粘合剂或阳极键合将晶片固定在玻璃环上。吸收体图案通过电子束光刻划定为PMMA或SAL601。在抗蚀剂显影和氧等离子体清洗之后，镀金可用于产生所需厚度的特征。11

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