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Repairing x-ray masks with Ta absorbers using focused ion beams

机译:使用聚焦离子束用Ta吸收剂修复X射线掩模

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Abstract: A focus ion beam system was used to repair x-ray masks with Ta absorbers. To repair opaque defects, excess Ta is removed by ion milling. Since the wall of the milled pattern is tapered compared to the absorber patterns of the mask, milling parameters such as the ion dose are justified by printing the repaired pattern on the resist with the SR exposure system. Clear repairs are made with Ta deposited using a organometallic material. Since the Ta content of the deposit was about 30%, a Ta deposition layer thicker than 1.2-$mu@m is necessary to keep the contrast of the x-rays high. The repaired Ta absorber patterns have high chemical durability and are not damaged by wet cleaning with strong acid. We printed on resists with repaired masks and confirmed that the defects were completely repaired.!6
机译:摘要:聚焦离子束系统用于修复带有Ta吸收剂的X射线掩模。为了修复不透明的缺陷,可通过离子铣削去除多余的Ta。由于与掩模的吸收体图案相比,铣削图案的壁是渐缩的,因此可以通过使用SR曝光系统在抗蚀剂上印刷修复后的图案来证明铣削参数(例如离子剂量)的合理性。使用有机金属材料沉积的Ta可以进行清晰的维修。由于沉积物中的Ta含量约为30%,所以需要一层厚度大于1.2-μm的Ta沉积层以保持高的X射线对比度。修复后的Ta吸收剂图案具有很高的化学耐久性,不会被强酸湿洗而损坏。我们用修复过的掩模在抗蚀剂上印刷,并确认缺陷已完全修复。!6

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