Abstract: In this paper, we report on the evaluation of the SiC X-ray mask distortion induced by the backetching receding fabrication process by experiment and simulation. The window-opening process for the backetching mask induced pattern displacements of about the same level as measurement accuracy. Large pattern displacements normally induced by the Si backetching process are reduced by using a lower-stress membrane and/or a thicker Si substrate. Simulation shows that a larger-diameter substrate also reduces mask distortion. The one-point anodic bonding technique has been developed, which suppresses the pattern displacements in the last stage of bonding to the frame, to within measurement error (20 nm: 3$sigma@).!11
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