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Lithographic performance of SiNx single-layer halftone mask

机译:SiNx单层半色调掩模的光刻性能

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Abstract: An aging process that makes SiNx single-layer halftone film stable for DUV (248 nm) exposure has been established. The light irradiation with a low pressure mercury lamp was used to age the SiNx halftone film from the tendency of the transmittance change caused by the DUV exposure. Taking account of the optical constants shift during aging process, a SiNx halftone film with transmittance T $EQ 9.3%, phase shift angle $theta $EQ 178 degrees was obtained. At the SiNx film, no transmittance change was observed after 2800 J/cm$+2$/ DUV exposure. Using the mask, 0.2 $mu@m hole patterns were obtained with above 1.0 $mu@m depth of focus (DOF).!8
机译:摘要:建立了一种老化工艺,该工艺可使SiNx单层半色调膜对DUV(248 nm)曝光稳定。根据由DUV曝光引起的透射率变化的趋势,使用低压汞灯的光照射来使SiNx半色调膜老化。考虑到老化过程中的光学常数偏移,获得了具有透射率T $ EQ 9.3%,相移角$ theta $ EQ 178度的SiNx半色调膜。在SiNx膜上,在2800 J / cm $ + 2 $ / DUV曝光后没有观察到透射率变化。使用该掩膜,可以获得0.2μm@ m的孔图案,且焦点深度(DOF)大于1.0μm@m。!8

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